NPN Transistor. NTE2584 Datasheet

NTE2584 Transistor. Datasheet pdf. Equivalent

Part NTE2584
Description Silicon NPN Transistor
Feature NTE2584 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, H.
Manufacture NTE
Datasheet
Download NTE2584 Datasheet



NTE2584
NTE2584
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide ASO Range
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulsed Width 300µs, Duty Cycle 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VCB = 500V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 600mA
VCE = 5V, IC = 3A
VCE = 10V, IC = 600mA
VCB = 10V, f = 1MHz
IC = 3A, IB = 600mA
Min Typ Max Unit
– – 10 µA
– – 10 µA
20 – 50
8––
– 18 – MHz
– 80 – pF
– – 1.0 V



NTE2584
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Emitter Sustaining Voltage
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCO(sus)
VCEX(sus)
IC =3A, IB = 600mA
IC = 1mA, IE = 0
IC = 5mA, RBE =
IE = 1mA, IC = 0
IC = 5A, IB = 1A, L = 50µH
IC = 2.5A, IB1 = IB2 = 1A,
L = 1mH, Clamped
– – 1.5 V
800 – – V
500 – – V
7––V
500 – – V
500 – – V
TurnOn Time
Storage Time
Fall Time
ton VCC = 200V, IC = 4A,
tstg
IB1 = 0.8A, IB2 = 1.6A,
RL = 50
tf
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.402 (10.2)
.035
(0.9)
BC E
.346
(8.8)
.433
(11.0)
.100 (2.54)
.177 (4.5)
.051 (1.3)
.019 (0.5)







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