Document
NTE2584 Silicon NPN Transistor High Voltage, High Speed Switch
Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. Pulse Test: Pulsed Width ≤ 300µs, Duty Cycle ≤ 10%. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain–Bandwidth Product Output Capacitance Collector Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) Test Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 600mA VCE = 5V, IC = 3A VCE = 10V, IC = 600mA VCB = 10V, f = 1MHz IC = 3A, IB = 600mA Min – – 20 8 – – – Typ – – – – 18 80 – Max 10 10 50 – – – 1.0 MHz pF V Unit µA µA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Base Emitter Saturation Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Emitter Sustaining Voltage Symbol VBE(sat) Test Conditions IC =3A, IB = 600mA Min – 800 500 7 500 500 – – – Typ – – – – – – – – – Max 1.5 – – – – – 0.5 3.0 0.3 Unit V V V V V V µs µs µs
Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 5mA, RBE = ∞ V(BR)EBO IE = 1mA, IC = 0 VCO(sus) IC = 5A, IB = 1A, L = 50µH VCEX(sus) IC = 2.5A, IB1 = –IB2 = 1A, L = 1mH, Clamped Turn–On Time Storage Time Fall Time ton tstg tf VCC = 200V, IC = 4A, IB1 = 0.8A, IB2 = – 1.6A, RL = 50Ω
.402 (10.2)
.035 (0.9)
.177 (4.5) ..