NPN Transistor. NTE2585 Datasheet

NTE2585 Transistor. Datasheet pdf. Equivalent

Part NTE2585
Description Silicon NPN Transistor
Feature NTE2585 Silicon NPN Transistor High Voltage Amplifier Features: D High Breakdown Voltage D Low Outpu.
Manufacture NTE
Datasheet
Download NTE2585 Datasheet



NTE2585
NTE2585
Silicon NPN Transistor
High Voltage Amplifier
Features:
D High Breakdown Voltage
D Low Output Capacitance
D High Reliability
D Intended for High–Density Mounting (Suitable for Sets Whose Height is Restricted)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB = 800V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 2mA
VCE = 5V, IC = 10mA
VCE = 10V, IC = 2mA
VCB = 100V, f = 1MHz
IC = 10mA, IB = 2mA
IC = 10mA, IB = 2mA
IC = 100µA, IE = 0
IC = 1mA, RBE =
IE = 100µA, IC = 0
Min Typ Max Unit
– – 1 µA
– – 1 µA
20 – 50
10 – –
– 40 – MHz
– 1.6 – pF
– – 1.0 V
– – 1.5 V
800 – – V
800 – – V
7––V



NTE2585
.402 (10.2)
.035
(0.9)
BC E
.346
(8.8)
.433
(11.0)
.100 (2.54)
.177 (4.5)
.051 (1.3)
.019 (0.5)







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