NPN Transistor. NTE2590 Datasheet

NTE2590 Transistor. Datasheet pdf. Equivalent

Part NTE2590
Description Silicon NPN Transistor
Feature NTE2590 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage, High Reli.
Manufacture NTE
Datasheet
Download NTE2590 Datasheet




NTE2590
NTE2590
Silicon NPN Transistor
High Voltage Amp/Switch
Features:
D High Breakdown Voltage, High Reliability
D Low Output Capacitance
D Wide ASO Range
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
ICBO VCB = 900V, IE = 0
IEBO VEB = 4V, IC = 0
hFE VCE = 5V, IC =2mA
fT VCE = 10V, IC = 2mA
Cob VCB = 100V, f = 1MHz
VCE(sat) IC = 5mA, IB = 1mA
VBE(sat) IC =5A, IB = 1mA
V(BR)CBO IC = 1mA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 1mA, IC = 0
Min Typ Max Unit
– – 1.0 µA
– – 1.0 µA
20 50 120
– 6 – MHz
– 2.0 – pF
––5V
––2V
1700 – – V
900 – – V
5––V



NTE2590
.402 (10.2)
.035
(0.9)
BC E
.346
(8.8)
.433
(11.0)
.100 (2.54)
.177 (4.5)
.051 (1.3)
.019 (0.5)







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