NPN Transistor. NTE2592 Datasheet

NTE2592 Transistor. Datasheet pdf. Equivalent

Part NTE2592
Description Silicon NPN Transistor
Feature NTE2592 Silicon NPN Transistor Horizontal Output for HDTV Features: D High Breakdown Voltage: V(BR)C.
Manufacture NTE
Datasheet
Download NTE2592 Datasheet




NTE2592
NTE2592
Silicon NPN Transistor
Horizontal Output for HDTV
Features:
D High Breakdown Voltage: V(BR)CBO = 2000V Min
D Isolated TO220 Type Package
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.3°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Output Capacitance
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
VCB = 1800V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 300µA
VCE = 10V, IC = 300µA
IC = 600µA, IB = 120µA
IC = 600µA, IB = 120µA
IC = 100µA, IE = 0
IC = 100µA, RBE =
IE = 10µA, IC = 0
VCB = 100V, f = 1MHz
Min Typ Max Unit
– – 1 µA
– 1 µA
10 – 60
– 6 – MHz
––5V
––2V
2000 – – V
1800 – – V
5––V
– 1.8 – pF



NTE2592
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated







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