NPN Transistor. NTE2593 Datasheet

NTE2593 Transistor. Datasheet pdf. Equivalent

Part NTE2593
Description Silicon NPN Transistor
Feature NTE2593 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage: V(BR)CEO .
Manufacture NTE
Datasheet
Download NTE2593 Datasheet




NTE2593
NTE2593
Silicon NPN Transistor
High Voltage Amp/Switch
Features:
D High Breakdown Voltage: V(BR)CEO = 2100V Min
D Low Output Capacitance
D Wide ASO Range
D Isolated TO220 Type Package
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Output Capacitance
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
VCB = 2100V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 500µA
VCE = 10V, IC = 500µA
IC = 1mA, IB = 200µA
IC = 1A, IB = 200µA
IC = 10µA, IE = 0
IC = 100µA, RBE =
IE = 10µA, IC = 0
VCB = 100V, f = 1MHz
Min Typ Max Unit
– – 1 µA
– 1 µA
10 – 60
– 6 – MHz
– – 5V
– – 2V
2100 – – V
2100 – – V
5 – –V
– 1.3 – pF



NTE2593
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated







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