NPN Transistor. NTE2636 Datasheet

NTE2636 Transistor. Datasheet pdf. Equivalent

Part NTE2636
Description Silicon NPN Transistor
Feature NTE2636 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode Features: D High Breakd.
Manufacture NTE
Datasheet
Download NTE2636 Datasheet



NTE2636
NTE2636
Silicon NPN Transistor
Horizontal Deflection w/Internal Damper Diode
Features:
D High Breakdown Voltage: VCES = 1500V
D Built–In Damper Diode
D Isolated TO3PFM Type Package
Applications:
D TV/Character Display Horizontal Deflection Output
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Peak Current, IC(peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
Collector Surge Current, IC(surge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Collector–Emitter Diode Forward Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Transfer Ratio
Collector–Emitter Saturation Voltage
V(BR)EBO IE = 500mA, IC = 0
ICES VCE = 1500V, RBE = 0
hFE VCE = 5V, IC = 1A
VCE(sat) IC = 6A, IB = 1.2A
6––V
– – 500 µA
– – 25
––5V
Base–Emitter Saturation Voltage
VBE(sat) IC = 6A, IB = 1.2A
– – 1.5 V
Collector–Emitter Diode Forward Voltage
Fall Time
VECF
tf
IF = 8A
ICP = 6A, IB1 = 1.2A, IB2 ` –2.4A,
f H = 31.5kHz
– 2.0 V
– 0.5 µs



NTE2636
.126 (3.2)
.217 (5.5)
.197
(5.0)
.783
(19.9)
.615 (15.62)
Isol
.126
(3.22)
Dia
.197
(5.0)
.827
(21.0)
BCE
.215 (5.47)







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