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NTE2636 Dataheets PDF



Part Number NTE2636
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet NTE2636 DatasheetNTE2636 Datasheet (PDF)

NTE2636 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode Features: D High Breakdown Voltage: VCES = 1500V D Built–In Damper Diode D Isolated TO3PFM Type Package Applications: D TV/Character Display Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter–Base Voltage, VEBO . . . . . . . . . .

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NTE2636 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode Features: D High Breakdown Voltage: VCES = 1500V D Built–In Damper Diode D Isolated TO3PFM Type Package Applications: D TV/Character Display Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Collector Peak Current, IC(peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A Collector Surge Current, IC(surge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A Collector–Emitter Diode Forward Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Emitter–Base Breakdown Voltage Collector Cutoff Current DC Current Transfer Ratio Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Collector–Emitter Diode Forward Voltage Fall Time Symbol Test Conditions Min 6 – – – – – – Typ – – – – – – – Max – 500 25 5 1.5 2.0 0.5 V V V µs Unit V µA V(BR)EBO IE = 500mA, IC = 0 ICES hFE VCE(sat) VBE(sat) VECF tf VCE = 1500V, RBE = 0 VCE = 5V, IC = 1A IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A IF = 8A ICP = 6A, IB1 = 1.2A, IB2 ` –2.4A, f H = 31.5kHz .217 (5.5) .615 (15.62) .197 (5.0) Isol .783 (19.9) .126 (3.22) Dia .197 (5.0) .126 (3.2) .827 (21.0) B C E .215 (5.47) .


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