NPN Transistor. NTE2638 Datasheet

NTE2638 Transistor. Datasheet pdf. Equivalent

Part NTE2638
Description Silicon NPN Transistor
Feature NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse.
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Datasheet
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NTE2638
NTE2638
Silicon NPN Transistor
Darlington
Features:
D High Voltage, High Forward and Clamped Reverse Energy
D 10A Peak Collector Current
D 80W at +25°C Case Temperature
D Collector–Emitter Sustaining Voltage: 400V Min at 7A
Absolute Maximum Ratings: (TC = +25°C unless otherwise specifieid)
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Continuous Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Derate Linearly to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.64W/°C
Continuous Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Linearly to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Typical Thermal Resistance, Case–to–Heat Sink (Note 2), RthCHS . . . . . . . . . . . . . . . . . . . . 0.7°C/W
Lead Temperature (During Soldering, 1/8” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. This value applies for tw 5ms, duty cycle 10%.
Note 2. This parameter is measured using 0.003” (0.08mm) mica insulator with Dow–Corning 11
compound on both sides of the insulator, a 0.138–32 (formally 6–32) mounting screw with
bushing, and a mounting torque of 8 inlb (0.9 nm).



NTE2638
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
BaseEmitter Voltage
CollectorEmitter Saturation
Voltage
Diode Forward Voltage
SmallSignal Current Gain
SmallSignal Forward Current
Transfer Ratio
V(BR)CBO
V(BR)CEO
VCEX(sus)
ICEO
IEBO
hFE
VBE
VCE(sat)
VF
hfe
|hfe|
IC = 1mA, IE = 0, Note 3
IC = 10mA, IB = 0, Note 3
IC = 7A
VCE = 400V, IB = 0
VEB = 8V, IC = 0
IC = 2.5A, VCE = 5V, Note 3, Note 4
IC = 5A, VCE = 5V, Note 3, Note 4
IC = 7A, VCE = 5V, Note 3, Note 4
IB = 100mA, IC = 2A, Note 3, Note 4
IB = 250mA, IC = 5A, Note 3, Note 4
IB = 10mA, IC = 1A, Note 3, Note 4
IB = 100mA, IC = 2A, Note 3, Note 4
IB = 250mA, IC = 5A, Note 3, Note 4
IF = 7A, Note 3, Note 4
VCE = 5V, IC = 500mA, f = 1kHz
VCE = 5V, IC = 500mA, f = 1kHz
400
400
400
150
50
15
200
10
V
V
V
250 µA
15 mA
2.2 V
2.3 V
1.5 V
1.5 V
2.0 V
3.5 V
Collector Capacitance
Cobo IE = 0, VCB = 10V, f = 1MHz
Resistive–Load Switching Characteristics (TC = +25°C unless otherwise specified)
TurnOff Storage Time
TurnOff Fall Time
TurnOff Rise Time
ts IC = 5A, IB1 = 250mA,
tf
IB2 = 250mA, VBE(off) = 7.3V,
RL = 50, Note 5
tr
TurnOn Delay Time
td
Inductive–Load Switching Characteristics (TC = +25°C unless otherwise specified)
Voltage Storage Time
Current Storage Time
Voltage Rise Time
tsv V(clamp) = Min VCEX(sus), ICM = 5A,
tsi
IB1 = 250mA, IB2 = 250mA,
Note 5
trv
Storage Rise Time
tri
TurnOff Crossover Time
txo
3400
1520
160
20
3900
4700
1200
1200
2000
100
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note 3. These parameters must be measured using pulse techniques, tw = 300µs, duty cycle 2%.
Note 4. These parameters are measured with voltagesensing contacts separate from the current
carrying contacts located within 1/8(3.2mm) from the device body.
Note 5. Voltage and current values shown are nominal; exact values vary slightly with transistor pa-
rameters.







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