NPN Transistor. NTE2643 Datasheet

NTE2643 Transistor. Datasheet pdf. Equivalent

Part NTE2643
Description Silicon NPN Transistor
Feature NTE2643 Silicon NPN Transistor, VHF/UHF Low Noise Amp (Surface Mount) Features: D Low Noise Figure, .
Manufacture NTE
Datasheet
Download NTE2643 Datasheet




NTE2643
NTE2643
Silicon NPN Transistor,
VHF/UHF Low Noise Amp
(Surface Mount)
Features:
D Low Noise Figure, High Gain
D NF = 1.1dB, |S21e|2 = 13dB (f = 1GHz)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
VCB = 10V, IE = 0
VEB = 1V, IC = 0
– – 1 µA
– – 1 µA
DC Current Gain
hFE VCE = 10V, IC = 20mA
80 – 240
Output Capacitance
Cob VCB = 10V, IE = 0, f = 1MHz, Note 1 – 1.1 1.6 pF
Reverse Transfer Capacitance Cre
– 0.65 1.05 pF
Transition Frequency
fT VCE = 10V, IC = 20mA
5 7 – GHz
Insertion Gain
|S21e|2 VCE = 10V, IC = 20mA, f = 500MHz – 18 – dB
VCE = 10V, IC = 20mA, f = 1GHz
9.5 13.0 – dB
Noise Figure
NF VCE = 10V, IC = 5mA, f = 500MHz – 1 – dB
VCE = 10V, IC = 5mA, f = 1GHz
– 1.1 2.0 dB
Note 1. Cre is measured by 3 terminal method with capacitance bridge.



NTE2643
.008 (0.2)
CE
EB
.083
(2.1)
.051 (1.3)
.079 (2.0)
.049(1.25)
.037
(0.95)
.004 (0.1)







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)