/ Switch. NTE267 Datasheet

NTE267 Switch. Datasheet pdf. Equivalent

Part NTE267
Description Silicon NPN Transistor High Gain Darlington Power Amp / Switch
Feature NTE267 Silicon NPN Transistor High Gain Darlington Power Amp, Switch Features: D Forward Current Tra.
Manufacture NTE
Datasheet
Download NTE267 Datasheet




NTE267
NTE267
Silicon NPN Transistor
High Gain Darlington Power Amp, Switch
Features:
D Forward Current Transfer Ratio: hFE = 90,000 min.
D Free–Air Power Dissipation: 1.33W @ TA = +50°C
D Hard Solder Mountdown
Applications:
D Driver
D Regulator
D Audio Output
D Relay Substitute
D Touch Switch
D Oscillator
D IC Driver
D Servo Amplifier
D Capacitor Multiplier
Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Collector to Emitter, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter to Base, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V
Collector to Emitter, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation, PT
Tab at +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W
Free Air at +50°C w/Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Thermal Resistance, Junction to Case (Note 1), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W
Thermal Resistance, Junction to Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL . . . . . . . . . . +260°C
Note 1. Tab temperature is measured on center of tab, 1/16” from plastic body.



NTE267
Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Forward Current Transfer Ratio
hFE VCE = 5V, f = 1kHz IC = 200mA 90k
IC = 20mA 90k – –
Collector Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 0.5mA, Note 2 – – 1.5 V
Base Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 0.5mA
– – 2.0 V
Collector Cutoff Current
ICES VCE = Rated VCES, TJ = +25°C
– – 0.5 µA
ICBO VCE = Rated VCES, TJ = +150°C
20 µA
Emitter Cutoff Current
IEBO VEB = 13V
– – 0.1 µA
Collector Capacitance
Ccbo VCB = 10V, f = 1MHz
5 10 pF
Gain Bandwidth Product
fT VCE = 5V, IC = 20mA
75 MHz
Switching Times
Delay Time and Rise Time
Storage Time
Fall Time
td & tr
ts
tf
IC = 1A, IB1 = 1mA
IC = 1A, IB1 = IB2 = 1mA
IC = 1A, IB1 = IB2 = 1mA
100
350
800
ns
ns
ns
Note 2. Pulsed measurement, 300µsec pulse width, duty cycle 2%.
.380 (9.56)
.180 (4.57)
C .132 (3.35) Dia
.500
(12.7)
.325
1.200
(9.52)
C
(30.48)
Ref
B .070 (1.78) x 45°
.300 Chamf
(7.62)
.050 (1.27)
E
.400
(10.16)
Min
E BC
.100 (2.54)
.100 (2.54)







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