/ Switch. NTE270 Datasheet

NTE270 Switch. Datasheet pdf. Equivalent

Part NTE270
Description Silicon Complementary Transistors Darlington Power Amp / Switch
Feature NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Descripti.
Manufacture NTE
Datasheet
Download NTE270 Datasheet




NTE270
NTE270 (NPN) & NTE271 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
Description:
The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in
a TO218 type package designed for general purpose amplifier and low frequency switching applications.
Features:
D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7°C/W
Note 1. Pulse Width = 5ms, Duty Cycle 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 30mA, IB = 0, Note 2
ICEO VCE = 50V, IB = 0
ICBO VCB = 100V, IE = 0
IEBO VBE = 5V
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle 2%.
Min Typ Max Unit
100 – – V
– – 2.0 mA
– – 1.0 mA
– – 2.0 mA



NTE270
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
hFE
CollectorEmitter Saturation Voltage VCE(sat)
BaseEmitter Saturation Voltage
VBE(sat)
Switching Characteristics (Resistive Load)
IC = 5A, VCE = 4V
IC = 10A, VCE = 4V
IC = 5A, IB = 10mA
IC = 10A, IB = 40mA
IC = 10A, IB = 40mA
1000 – –
500 – –
– – 2.0 V
– – 3.0 V
– – 3.5 V
Delay Time
Rise Time
Storage Time
Fall Time
td VCC = 30V, IC = 5A,
0.15 µs
tr
IB = 20mA, Duty Cycle 2%,
IB1 = IB2, RC & RB Varied,
0.55
µs
ts TJ = +25°C
2.5 µs
tf 2.5 µs
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle 2%.
NTE270
C
B
NTE271
C
B
E
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
E
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners







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