/ 450ns. NTE2708 Datasheet

NTE2708 450ns. Datasheet pdf. Equivalent

Part NTE2708
Description Integrated Circuit NMOS / 8K UV EPROM / 450ns
Feature NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra–violet ligh.
Manufacture NTE
Datasheet
Download NTE2708 Datasheet




NTE2708
NTE2708
Integrated Circuit
NMOS, 8K UV EPROM, 450ns
Description:
The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has
8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–
gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (includ-
ing program data inputs) can be driven by Series 74 TTL circuits without the use of external pull–up
resistors. Each output can drive one Series 74 or 74LS TTL circuit without external resistors. The
data outputs for the NTE2708 are three–state for OR tying multiple devices on a common bus.
This EPROM is designed for high–density fixed memory applications where fast turn arounds and/or
program changes are required. This device is designed for operation from 0° to +70°C and is supplied
in a 24–Lead DIP package for insertion in mounting–hole rows on 600–mil (15.2 mm) centers.
Features:
D 1024 X 8 Organization
D All Inputs and Outputs Fully TTL Compatible
D Static Operation (No Clocks, No Refresh)
D Performance Ranges:
Max Access: 450ns
Min Cycle: 450ns
D 3–State Outputs for OR–Ties
D 8–Bit Output
D Plug–Compatible Pin–Outs Allowing Interchangeability
Absolute Maximum Ratings: (TA = 0° to +70°C, Note 1 unless otherwise specified)
Supply Voltage, VCC (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +15V
Supply Voltage, VDD (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +20V
Supply Voltage, VSS (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +15V
All Input Voltage (except program) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +20V
Program Input (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +35V
Output Voltage (operating, with respect to VSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –2 to +7V
Operating free–air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C
Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permenant
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions beyond those indicated in the “Recommended Operating
Conditions” section of this specification is not implied. Exposure to absolute–maximum–
rated conditions for extended periods may affect device reliability.
Note 2. Under absolute maximum ratings, voltage values are with respect to the most–negative sup-
ply voltage, VBB (substrate), unless otherwise noted. Throughout the remainder of this data
sheet, voltage values are with respect to VSS.



NTE2708
Operation (Read Mode):
Address (A0–A9)
The addressvalid interval determines the device cycle time. The 10bit positivelogic address is
decoded onchip to select one of the 1024 words of 8bit length in the memory array. A0 is the least
significant bit and A9 is the mostsignificant bit of the words address.
Chip Select, Program Enable [CS (PE)]
When the chip select is low, all eight outputs are enabled and the eightbit addressed word can be
read. When the chip select is high, all eight outputs are in a highimpedance state.
Data Out (Q1–Q8)
The chip must be selected before the eightbit outputs word can be read. Data will remain valid until
the address is changed or the chip is deselected. When deselected, the threestate outputs are in
a highimpedance state. The outputs will drive TTL circuits without external components.
Program
The program pin must be held below VCC in the read mode.
Operation (Program Mode):
Erase
Before programming, the NTE2708 is erased by exposing the chip through the transparent lid to high
intensity ultraviolet light (wavelength 2537 angstroms). The recommended minimum exposure dose
(= UV intensity x exposure time) is fifteen wattseconds per square centimeter. Thus, a typical 12
milliwatt per square centimeter, filterless UV lamp will erase the device in a minimum of 21 minutes.
The lamp should be located about 2.5 centimeters above the chip during erasure. After erasure, all
bits are in the 1state.
Programming
Programming consists of successively depositing a small amount of charge to a selected memory cell
that is to be changed from the erased high state to the low state. A low can be changed to a high only
by erasure. Programming is normally accomplished on a PROM or EPROM Programmer. Program-
ming must be done at room temperature (+25°C) only.
To Start Programming
First bring the CS (PE) pin to +12V to disable the outputs and convert them to inputs. This pin is held
high for the duration of the programming sequence. The first word to be programmed is addressed
(it is customary to begin with the 0address) and the data to be stored is placed on the Q1Q8 pro-
gram inputs. Then a +25V program pulse is applied to the program pin. After 0.1 to 1.0 milliseconds
the program pin is brought back to 0V. After at least one microsecond the word address is sequentially
changed to the next location, the new data is set up and the program pulse is applied.
Programming continues in this manner until all words have been programmed. This constitutes one
of N program loop. The entire sequence is then repeated N times with N x tw(PR) 100 ms. Thus,
if tw(PR) = 1 ms; then N = 100, the minimum number of program loops required to program the EPROM.
To Stop Programming
After cycling through the N program loops, the last program pulse is brought to 0V, then Program En-
able [CS (PE)] is brought to VIL which takes the device out of the program mode. The data supplied
by the programmer must be removed before the address is changed since the program inputs are now
data outputs and change of address could cause a voltage conflict on the output buffer. Q1Q8 out-
puts are invalid up to 10 microseconds after the program enable pin is brought from VIH(PE) to VIL.







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