Erasable PROM. NTE2716 Datasheet

NTE2716 PROM. Datasheet pdf. Equivalent

Part NTE2716
Description Integrated Circuit NMOS / 16K UV Erasable PROM
Feature NTE2716 Integrated Circuit NMOS, 16K UV Erasable PROM Description: The NTE2716 is a 16,384–bit (2048.
Manufacture NTE
Datasheet
Download NTE2716 Datasheet



NTE2716
NTE2716
Integrated Circuit
NMOS, 16K UV Erasable PROM
Description:
The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a
24–Lead DIP type package designed for system debug usage and similar applications requiring non-
volatile memory that could be reprogrammed periodically. The transparent lid on the package allows
the memory content to be erased with ultraviolet light.
The NTE2716 operates from a single power supply and has a static power down mode.
Features:
D Single 5V Power Supply
D Automatic Power–Down Mode (Standby)
D Organized as 2048 Bytes of 8Bits
D TTL Compatible During Read and Program
D Access Time: 350ns
D Output Enable Active Level is User Selectable
Absolute Maximum Ratings: (Note 1)
All Input or Output Voltages (with respect to VSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6 to –0.3V
VPP Supply Voltage (with respect to VSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 to –0.3V
Temperature Under Bias (VPP = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10° to +80°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range. Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Note 1. Permanent device may occur if “Absolute Maximum Ratings” are exceeded. Functional op-
eration should be restricted to “Recommended Operating Conditions”. Exposure to higher
than recommended voltages for extended periods of time could affect device reliability.
Note 2. This device contains circuitry to protect the inputs against damage due to high static voltages
or electric fields; however, it is advised that normal precautions be taken to avoid application
of any voltage higher than maximum rated voltages to this high–impedance circuit.



NTE2716
Mode Selection:
Mode
Pin Number
Read
Output Disable
Standby
Program
Program Verify
Program Inhibit
9–11, 13–17
DQ
12
VSS
18
E/Progr
20
G (Note3)
21
VPP
Data Out
VSS
VIL
VIL VCC (Note 3)
High Z VSS Dont Care VIH VCC (Note 3)
High Z
VSS
VIH
Dont Care
VCC
Data In
VSS Pulsed VIL to VIH VIH
VPPH
Data Out
VSS
VIL
VIL VPPH
High Z
VSS
VIL
VIH VPPH
Note 3. In Read Mode if VPP VIH, then G (active low)
VPP VIL, then G (active high)
24
VCC
VCC
VCC
VCC
VCC
VCC
VCC
Capacitance: (f = 1MHz, TA = +25°C, periodically sampled rather than 100% tested)
Parameter
Symbol
Test Conditions
Min Typ Max
Input Capacitance
Cin Vin = 0V
4.0 6.0
Output capacitance
Cout Vout = 0V
8.0 12.0
Unit
pF
pF
Note 4. Capacitance measured with a Boonton Meter or
effective capacitance calculated from the equation:
C = It
V
DC Operating Conditions and Characteristics: (Full Operating Voltage and Temperature Range
unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Recommended DC Read Operating Conditions
Supply Voltage
VCC, VPP Note 5
Input High Voltage
VIH
Input Low Voltage
VIL
Recommended DC Operating Conditions
4.75 5.0 5.25
2.0
0.1
VCC+1.0
+0.8
V
V
V
Address, G and E/Progr Input Sink Current
Output Leakage Current
VCC Supply Current (Standby)
VCC Supply Current (Active)
VCC Supply Current
Output Low Voltage
Output High Voltage
Iin Vin = 5.25V
ILO Vout = 5.25V, G = 5V
ICC1 E/Progr = VIH, G = VIL
ICC2 Outputs Open, G = E/Progr = VIL
IPP1 VPP = 5.25V, Note 5
VOL IOL = 2.1mA
VOH IOH = 400µA
2.4
10 µA
10 µA
25 mA
100 mA
5 mA
0.45 V
V
Note 5. VCC must be applied simultaneously or prior to VPP. VCC must also be switched off simulta-
neously with or after VPP. With VPP connected directly to VCC during the read operation, the
supply current would then be the sum of IPP1 and ICC.







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