Power Amplifiers. NTE272 Datasheet

NTE272 Amplifiers. Datasheet pdf. Equivalent

Part NTE272
Description Silicon Darlington Complementary Power Amplifiers
Feature NTE272 (NPN) & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE27.
Manufacture NTE
Datasheet
Download NTE272 Datasheet




NTE272
NTE272 (NPN) & NTE273 (PNP)
Silicon Darlington Complementary
Power Amplifiers
Description:
The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type
case designed for use in complementary amplifiers and driver applications.
Features:
D High DC Current Gain:
hFE = 25,000 (Min) @ IC = 200mA
= 15,000 (Min) @ IC = 500mA
D Collector–Emitter Breakdown Voltage:
V(BR)CES = 40V @ IC = 500mA
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 1.5V @ IC = 1A
D Monolithic Construction for High Reliability
Absolute Maximum Ratings:
Collector–Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Note 1. NTE273 is a discontinued device and no longer available.
Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor ele-
ments are identical. V(BR)CES is tested in lieu of V(BR)CEO in order to avoid errors caused
by noise pickup. The voltage measured during the V(BR)CES test is the V(BR)CEO of the output
transistor.



NTE272
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
V(BR)CES
V(BR)CBO
V(BR)EBO
IC = 100µA, VBE = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
40
50
12
V
V
V
Collector Cutoff Current
ICBO VCB = 30V, IE = 0
– – 100 nA
Emitter Cutoff Current
ON Characteristics (Note 3)
IEBO VEB = 10V, IC = 0
– – 100 nA
DC Current Gain
|hfe| IC = 200mA, VCE = 5V
25,000 65,000 150,000
IC = 500mA, VCE = 5V
15,000 35,000
IC = 1A, VCE = 5V
4,000 12,000
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
BaseEmitter ON Voltage
VCE(sat)
VBE(sat)
VBE(ON)
IC = 1A, IB = 2mA
IC = 1A, IB = 2mA
IC = 1A, VCE = 5V
1.2 1.5 V
1.85 2.0 V
1.7 2.0 V
Dynamic Characteristics
SmallSignal Current Gain
hFE IC = 200mA, VCE = 5V,
f = 100MHz, Note 2
1.0 3.2
CollectorBase Capacitance
Ccb VCB = 10V, IE = 0, f = 1MHz
2.5 6.0 pF
Note 3. Pulse test: Pulse Width 300µs, Duty Cycle 2.0%.
NTE272 Schematic
C
B
E
NTE273 Schematic
C
B
E
.160
(4.06)
.218
(5.55)
.475
(12.0)
Min
.380 (9.65) Max
.050 (1.27)
.280 (7.25) Max
.128 (3.28) Dia
EB C
.995
(25.3)
Uniwatt darlington transistors can be used in any
number of low power applications, such as relay
drivers, motor control and as general purpose
amplifiers. As an audio amplifier these devices,
when used as a complementary pair, can drive
3.5 watts into a 3.2ohm speaker using a 14 volt
supply with less than one per cent distortion. Be-
cause of the high gain the base drive requirement
is as low as 1mA in this application. They are also
useful as power drivers for high current applica-
tion such as voltage regulators.
.100 (2.54)
.200 (5.08)
Collector Connected to Tab
TO202N







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