Erasable EPROM. NTE2764 Datasheet

NTE2764 EPROM. Datasheet pdf. Equivalent

Part NTE2764
Description 64K Erasable EPROM
Feature NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit .
Manufacture NTE
Datasheet
Download NTE2764 Datasheet




NTE2764
NTE2764
Integrated Circuit
NMOS, 64K Erasable EPROM, 200ns
Description:
The NTE2764 is a 65,536–bit (8192 X 8 bit) Ultraviolet Erasable and Electrically Programmable
Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V sup-
ply, making it ideal for microprocessor applications. It features an output enable control and offers
a standby mode with an attendant 67% savings in power consumption.
A distinctive feature of the NTE2764 is a separate output control, output enable (OE) from the chip
enable control (CE). The OE control eliminates bus contention in multiple–bus microprocessor sys-
tems. The NTE2764 features fast, simple one–pulse programming controlled by TTL–level signals.
Total programming time for all 65,536 bits is 420 seconds.
Features:
D Ultraviolet Erasable and Electrically Programmable
D Access Time: 250ns Max
D Single Location Programming
D Programmable with Single Pulse
D Low Power Dissipation: 150mA Max (Active Current)
50mA Max (Standby Current)
D Input/Output TTL Compatible for Reading and Programming
D Single +5V Power Supply
D Three–State Outputs
Absolute Maximum Ratings: (TA = +25°C, Note 1 unless otherwise specified)
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.6 to +6V
Supply Voltage, VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.6 to +22V
Output Voltage, VOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.6 to +6V
Input Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.6 to +6V
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10°C to +80°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +125°C
Note 1. Exposing the device to stresses above those listed in Absolute Maximum Ratings could
cause permanent damage. The device is not meant to be operated under conditions outside
the limits described in the operational sections of this specification. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.



NTE2764
DC Electrical Characteristics: (VCC = +5V ±5% unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Read Mode and Standby Mode (TA = 0° to +70°C)
Output High Voltage
VOH IOH = 400µA
Output Low Voltage
VOL IOL = 2.1mA
Input High Voltage
VIH
2.4
––
2.0
Input Low Voltage
VIL
0.1
Output Leakage Current
ILO VOUT = 5.25V
––
Input Leakage Current
VCC Current
Standby
ILI VIN = 5.25V
ICC1 CE = VIH
––
––
Active
ICC2 OE = CE = VIL
Program, Program Verify, and Program Inhibit Mode (TA = +25° ±5°C, VPP = +21V ±0.5V)
Input High Voltage
VIH
2.0
Input Low Voltage
VIL
0.1
Input Leakage Current
Output High Voltage
ILI
VOH
VIN = VIL or VIN
IOH = 400µA
––
2.4
Output Low Voltage
VCC Current
VPP Current
VOL IOL = 2.1mA
ICC
IPP CE = VIL, PGM = VIL
––
––
––
Max Unit
0.45
VCC +1
+0.8
10
10
V
V
V
V
µA
µA
50 mA
150 mA
VCC +1
+0.8
10
0.45
150
30
V
V
µA
V
V
mA
mA
AC Electrical Characteristics: (VCC = +5V ±5% unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Read Mode and Standby Mode (TA = 0° to +70°C, Note 2)
Address to Output Delay
tACC CE = OE = VIL
– – 250 ns
CE to Output Delay
tCE OE = VIL
– – 250 ns
Output Enable to Output Delay
tOE CE = VIL
10 100 ns
Output Enable High to Output Float
tDF CE = VIL
0 90 ns
Address to Output Hold
tOH CE = OE = VIL
Read Mode and Standby Mode (TA = +25°C ±5°C, VPP = +21V ±5V, Note 3)
Address Setup Time
tAS
0 – – ns
2 – – µs
OE Setup Time
tOES
2 – – µs
Note 2. Test Conditions:
Output Load: 1 TTL gate and CL = 100pF
Input Rise and fall Times: 20ns
Input Pulse Levels: 0.8V to 2.2V
Timing Measurement Reference Level:
Inputs: 1.0V and 2.0V
Outputs: 0.8V and 2.0V
Note 3. Test Conditions:
Input Pulse Levels: 0.8V to 2.2V
Input Timing Reference Level: 1.0V and 2.0V
Output Timing Reference Level: 0.8V and 2.0V
Input Rise and fall Times: 20ns







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