RF Amp. NTE278 Datasheet

NTE278 Amp. Datasheet pdf. Equivalent

Part NTE278
Description Silicon NPN Transistor Broadband RF Amp
Feature NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor i.
Manufacture NTE
Datasheet
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NTE278
NTE278
Silicon NPN Transistor
Broadband RF Amp
Description:
The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband
applications requiring good linearity. Usable as a high frequency current mode switch to 200mA.
Features:
D Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz
D High Current–Gain Bandwidth Product: fT = 1200MHz Min @ IC = 50mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation (TC = +75°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1. Total Device Dissipation at TA = +25°C is 1 Watt.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 5mA, IB = 0
VCER(sus) IC = 5mA, RBE = 10, Note 2
ICEO VCE = 15V, IB = 0
ICEX VCE = 15V, VBE = –1.5V, TC = +150°C
VCE = 35V, VBE = –1.5V
IEBO VBE = 3V, IC = 0
20
40
––V
––V
– 20 µA
– 5 mA
– 5 mA
– 100 µA
Note 2. Pulsed through a 25mH inductor; 50% Duty Cycle.



NTE278
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
hFE IC = 360mA, VCE = 5V
5––
Dynamic Characteristics
IC = 50mA, VCE = 15V
40 120
CurrentGain Bandwidth Product
CollectorBase Capacitance
fT IC = 50mA, VCE = 15V, f = 200MHz
Ccb VCB = 15V, IE = 0, f = 1MHz
1200
1.8
MHz
3.5 pF
Noise Figure
NF IC = 10mA, VCE = 15V, f = 200MHz
3 dB
Functional Test
CommonEmitter Amplifier Voltage
Gain
Gve IC = 50mA, VCC = 15V, f = 50 to 216MHz 11
dB
Power Input
Pin IC = 50mA, VCC = 15V, RS = 50,
Pout = 1.26mW, f = 200MHz
– – 0.1 mW
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter
.018 (0.45)
Base
Collector/Case
45°
.031 (.793)







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