/ Switch. NTE282 Datasheet

NTE282 Switch. Datasheet pdf. Equivalent

Part NTE282
Description Silicon NPN Transistor Final RF Power Amp / Switch
Feature NTE282 Silicon NPN Transistor Final RF Power Amp, Switch Applications: D HF Power Amplifiers, Switch.
Manufacture NTE
Datasheet
Download NTE282 Datasheet




NTE282
NTE282
Silicon NPN Transistor
Final RF Power Amp, Switch
Applications:
D HF Power Amplifiers, Switchings
D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff curent
Collector–Base Voltage
ICBO
IEBO
VCBO
VCB = 50V, IE = 0
VEB = 6V, IC = 0
IC = 100µA
––
––
100 –
1 µA
2 µA
–V
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 10mA
60 – – V
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
VCE(sat)
VBE(sat)
hFE1
hFE2
IC = 2A, IB = 400mA
IC = 2A, IB = 400mA
VCE = 2V, IC = 100mA
VCE = 2V, IC = 2A
– 0.3 0.8
– 1.0 1.4
27 100 264
– 60 –
V
V
Output Capacitance
Collector–Base Time Constant
Gain Bandwidth Product
Power Output
Power Gain
Cob VCB = 10V, IE = 0, f = 1MHz
– 45 60 pF
Cc  rbb’ VCB = 10V, IE = –15mA, f = 31.9MHz –
35 70 ps
fT VCB = 10V, IE = –100mA
70 140 – MHz
PO PIN = 400mW, VCC = 12V
4 6 –W
P  G f = 27MHz
10 –
– dB



NTE282
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter
.018 (0.45)
Base
Collector/Case
45°
.031 (.793)







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