Complementary Transistors. NTE29 Datasheet

NTE29 Transistors. Datasheet pdf. Equivalent

Part NTE29
Description Silicon Complementary Transistors
Feature NTE29 (NPN) & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current Switch Descript.
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Datasheet
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NTE29
NTE29 (NPN) & NTE30 (PNP)
Silicon Complementary Transistors
High Power, High Current Switch
Description:
The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed
for use in high power amplifier and switching circuit applications.
Features:
D High Current Capability: IC = 50A (Continuous)
D DC Current Gain: hFE= 15 to 60 @ IC = 25A
D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.715W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 0.2A, IB = 0, Note 1
ICEO VCE = 40V, IB = 0
ICEX VCE = 80V, VEB(off) = 1.5V
VCE = 80V, VEB(off) = 1.5V,
TC = +150°C
ICBO VCB = 80V, IE = 0
IEBO VBE = 5V, IC = 0
Min Typ Max Unit
80 –
––
––
––
–V
1 mA
2 mA
10 mA
––
––
2 mA
5 mA



NTE29
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VBE(on)
IC = 25A, VCE = 2V
IC = 50A, VCE = 5V
IC = 25A, IB = 2.5A
IC = 50A, IB = 10A
IC = 25A, IB = 2.5A
IC = 25A, VCE = 2V
15 60
5– –
–– 1 V
–– 5 V
–– 2 V
–– 2 V
Current GainBandwidth Product
Output Capacitance
SmallSignal Current Gain
fT IC = 5A, VCE = 10V, f = 1MHz 2 – – MHz
Cob VCB = 10V, IE = 0, f = 0.1MHz – – 1200 pF
hfe IC = 10A, VCE = 5V, f = 1kHz 15 – –
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case







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