NTE29 (NPN) & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current Switch
Description: The NTE29 (NPN)...
NTE29 (
NPN) & NTE30 (
PNP) Silicon Complementary
Transistors High Power, High Current Switch
Description: The NTE29 (
NPN) and NTE30 (
PNP) are compelmentary power
transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications. Features: D High Current Capability: IC = 50A (Continuous) D DC Current Gain: hFE= 15 to 60 @ IC = 25A D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.715W/°C Operating Junction Temperat...