N-Channel MOSFET. NTE291 Datasheet


NTE291 MOSFET. Datasheet pdf. Equivalent


NTE291


N-Channel MOSFET
NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch
Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high–fidelity amplifiers. Features: D Low Saturation Voltage Absolute Maximum Ratings: Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Collector–to–Emitter Voltage (RBB = 100Ω, VBB = 0), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter–To–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current (TC ≤ +106°C), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Continuous Base Current (TC ≤ +130°C), IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Power Dissipation, PD TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....



NTE291
NTE291 (NPN) & NTE292 (PNP)
Silicon Complementary Transistors
Medium Power Amp, Switch
Description:
The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementa-
ry transistors in a TO220 type package designed for switching and amplifier applications. They are
especially designed for series and shunt regulators and as a driver and output stage of high–fidelity
amplifiers.
Features:
D Low Saturation Voltage
Absolute Maximum Ratings:
Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V
Collector–to–Emitter Voltage (RBB = 100, VBB = 0), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V
Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–To–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current (TC +106°C), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Continuous Base Current (TC +130°C), IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Power Dissipation, PD
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W
Derate Linearly Above TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Linearly Above TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W
Derate Linearly Above TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0144W/°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering), TL
At distance 1/8 in. (3.17mm) from case for 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . . +235°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W
Note 1. NTE292MCP is a matched complementary pair containing 1 each of NTE291 (NPN) and
NTE292 (PNP).

NTE291
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
ICEO
ICER
ICEX
VCE = 60V, IB = 0
RBE = 100, VCE = 120V
RBE = 100, VCE = 120V,
TC = +100°C
VCE = 120V, VBE = 1.5V
– – 1 mA
– – 0.1 mA
– – 2 mA
– – 0.1 mA
Emitter Cutoff Current
CollectortoEmitter Sustaining
Voltage
VCE = 120V, VBE = 1.5V,
TC = +100°C
IEBO VBE = 5V, IC = 0
VCEO(sus) IC = 0.1A, IB = 0, Note 1
––
––
120
2 mA
1 mA
V
CollectortoEmitter Sustaining VCER(sus) RBE = 100, IC = 0.1A, Note 2 130 – – V
Voltage
DC Forward Current
hFE VCE = 4V, IC = 1.5A, Note 1
VCE = 2.5V, IC = 4A, Note 1
15 150
2––
BasetoEmitter Voltage
VBE VCE = 4V, IC = 1.5A, Note 1
––2V
CollectortoEmitter Saturation
Voltage
VCE(sat)
VCE = 2.5V, IC = 4A, Note 1
IC = 1.5A, IB = 0.15A, Note 1
IC = 4A, IB = 2A, Note 1
– – 3.5 V
– – 1.2 V
– – 2.5 V
Small Signal Forward Current
Transfer Ratio
hfe VCE = 4V, IC = 0.5A, f = 50kHz 20
Gain Bandwidth Product
fT VCE = 4V, IC = 0.5A
4 – – MHz
Small Signal Forward Current
Transfer Ratio
|hfe| VCE = 4V, IC = 0.5A, f = 50kHz 4 – –
CollectortoBase Capacitance
Cobo VCB = 10V, IC = 0, f = 1MHz
– – 250 pF
Note 1. Pulsed: Pulse Duration = 300µs, Duty Factor = 0.018.
Note 2. CAUTION: The sustaining voltage (VCER(sus)) MUST NOT be measured on a curve tracer.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500 (12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250
(6.35)
Max
.500 (12.7)
Min
Emitter
Collector/Tab




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