N-Channel MOSFET. NTE2921 Datasheet

NTE2921 MOSFET. Datasheet pdf. Equivalent

Part NTE2921
Description N-Channel MOSFET
Feature NTE2921 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package Features: D Dynamic dv/dt.
Manufacture NTE
Datasheet
Download NTE2921 Datasheet




NTE2921
NTE2921
MOSFET
NCh, Enhancement Mode
High Speed Switch
TO247 Type Package
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Isolated Central Mounting Hole
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
G
D
S
Absolute Maximum Ratings:
Continuous
TTCC
=
=
Drain Current
+255C . . . . . .
+1005C . . . . .
.(V. .G.S.
.....
=
..
..
10V),
.....
.....
.ID. .
...
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15A
9.7A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Power
DDeisrsaitpeaLtiionnea(TrlCy
A=b+o2v5e5C25),5PCD
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. . 150W
1.2W/5C
GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 550mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.8V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +3005C
Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.835C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 405C/W
Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . 0.245C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 50V, starting TJ = +255C, L = 3.9mH, RG = 25+ , IAS = 15A
Note 3. ISD 3 15A, di/dt 3 150A/3s, VDD 3 250V, TJ 3 +1505C
Rev. 1013



NTE2921
Note 4. Pules Width 3 3003s, Duty Cycle 3 2%.







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