N-Channel MOSFET. NTE2922 Datasheet

NTE2922 MOSFET. Datasheet pdf. Equivalent

Part NTE2922
Description N-Channel MOSFET
Feature NTE2922 MOSFET N−Ch, Enhancement Mode High Speed Switch TO3P Type Package Features: D Dynamic dv/dt.
Manufacture NTE
Datasheet
Download NTE2922 Datasheet



NTE2922
NTE2922
MOSFET
NCh, Enhancement Mode
High Speed Switch
TO3P Type Package
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Isolated Central Mounting Hole
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
G
D
S
Absolute Maximum Ratings:
Continuous
TTCC
=
=
Drain Current
+25C . . . . . .
+100C . . . . .
.(V. .G.S.
.....
=
..
..
10V),
.....
.....
.ID. .
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16A
10A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180W
GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 390mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 50V, starting TJ = +25C, L = 2.7mH, RG = 25, IAS = 16A
Note 3. ISD 16A, di/dt 200A/s, VDD 400V, TJ +150C
Rev. 1015



NTE2922
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A
400 − − V
Breakdown Voltage Temp. Coefficient
Static DraintoSource OnResistance
V(BR)DSS
TJ
RDS(on)
Reference to +25C, ID = 1mA
VGS = 10V, ID = 8.9A
0.51 V/C
− − 0.30
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250A
2.0 4.0 V
Forward Transconductance
gfs VDS = 40V, ID = 8A
8− − S
DraintoSource Leakage Current
IDSS VDS = 400V, VGS = 0V
− − 25 A
GatetoSource Forward Leakage
IGSS
VGS = 20V, VDS = 0
− − 100 nA
GatetoSource Reverse Leakage
IGSS
VGS = 20V, VDS = 0
− − −100 nA
Total Gate Charge
GatetoSource Charge
Qg ID = 16A, VDS = 320V, VGS = 10V, − − 150 nC
Qgs Note 4
− − 23 nC
GatetoDrain (“Miller”) Charge
Qgd
− − 80 nC
TurnOn Delay Time
Rise Time
td(on) VDD = 200V, ID = 16A, RG = 6.2, 16 ns
tr RD = 12, Note 4
49 ns
TurnOff Delay Time
td(off)
87 ns
Fall Time
tf
47 ns
Internal Drain Inductance
Internal Source Inductance
LD Between lead, .250in. (6.0) mm from 5.0 nH
LS package and center of die contact 13 nH
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
2600 pF
Output Capacitance
Coss
660 pF
Reverse Transfer Capacitance
Crss
250 pF
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
IS
ISM Note 1
− − 16 A
− − 64 A
Diode Forward Voltage
VSD TJ = +25C, IS = 16A, VGS = 0V
− − 1.6 V
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
trr TJ = +25C, IF = 16A,
Qrr di/dt = 100A/s, Note 4
380 570 ns
4.7 7.1 C
ton Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width 300s; duty cycle 2%.







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