N-Channel MOSFET. NTE2930 Datasheet

NTE2930 MOSFET. Datasheet pdf. Equivalent

Part NTE2930
Description N-Channel MOSFET
Feature NTE2930 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3PML Type Package Features: D Avalan.
Manufacture NTE
Datasheet
Download NTE2930 Datasheet




NTE2930
NTE2930
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO3PML Type Package
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Lower Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower RDS(on): 0.0323 Typ
D Lower Leakage Current: 105 A (Max) @ VDS = 100V
D
G
S
Absolute Maximum Ratings:
DraintoSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain CCuornretinntu, oIDus
PulsTTeCCd==(N++o21t50e50C15C).
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. . 31A
21.9A
. 170A
Total
PDowerearteDiAsbsiopvaetio2n55(CTC.
=
..
+255C),
.......
.P.D.
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. . . 100W
0.67W/5C
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 641mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +3005C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 405C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 1mH, IAS = 31A, VDD = 25V, RG = 273 , Starting TJ = +255C.
Rev. 1013



NTE2930
Note 3. ISD 3 40A, di/dt 3 470A/5 s, VDD 3 V(BR)DSS, Starting TJ = +255C.







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