N-Channel MOSFET. NTE2941 Datasheet

NTE2941 MOSFET. Datasheet pdf. Equivalent

Part NTE2941
Description N-Channel MOSFET
Feature NTE2941 MOSFET N−Ch, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features:Featu.
Manufacture NTE
Datasheet
Download NTE2941 Datasheet




NTE2941
NTE2941
MOSFET
NCh, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
Features:Features:
D Low Static DrainSource ON Resistance
D Improved Inductive Ruggedness
D Fast Switching Times
D Low Input Capacitance
D Extended Safe Operating Area
D TO220 Type Isolated Package
D
G
S
Absolute Maximum Ratings:
DrainSource Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
DrainGate Voltage (RGS = 1M+ , Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Drain CCuornretinntu, oIDus
PulsTTeCCd==(N++o21t50e50C25C).
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. . 28A
19.6A
. 200A
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.5A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Total
PDowerearteDiAsbsiopvaetio2n55(CTC.
=
..
+255C),
.......
.P.D.
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. . . . 48W
0.52W/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +3005C
Thermal Resistance:
TMyapxicimaluCmaJsuenctotioSnintko(MCaosuen,tiRngthJsCur.fa. c. e.
....
flat,
........
smooth,
....
and
.........
greased),
Maximum JunctiontoAmbient (Free Air Operation), RthJA . . . . . . . .
.....
R. .th.C.S.
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1.92K/W
. 0.5K/W
62.5K/W
Note 1. TJ = +255 to +1755C.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 50.H, VDD = 25V, RG = 25+ , Starting TJ = +255C.
Rev. 1013



NTE2941
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
Gate Threshold Voltage
GateSource Leakage Forward
GateSource Leakage Reverse
Zero Gate Voltage Drain Current
Static DrainSource ON Resistance
Forward Transconductance
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
gfs
VGS = 0V, ID = 250.A
VDS = VGS, ID = 250.A
VGS = 20V
VGS = 20V
VDS = Max. Rating, VGS = 0
VDS = 0.8 Max. Rating, TC = +1505C
VGS = 10V, ID = 25A, Note 4
VDS . 50V, ID = 25A, Note 4
60 − − V
2.0 4.0 V
− − 100 nA
− − −100 nA
− − 250 .A
− − 1000 .A
− − 0.028 +
15
mho
s
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
2450 pF
Output Capacitance
Coss
740 pF
Reverse Transfer Capacitance
Crss
360 pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
td(on)
tr
td(off)
V(MDOD S=F0E.5T
BsVwDitScSh,inIDg
=tim50eAs ,aZreO
= 9.1+ ,
essentially
independent of operating temperature)
32 ns
210 ns
75 ns
Fall Time
tf
− − 130 ns
Total Gate Charge
(GateSource Plus GateDrain)
GateSource Charge
Qg
Qgs
RVGatSin=g,1(0GVa,teIDc=ha5r0gAe,isVDeSss=en0t.ia8llMy ax.
independent of operating temperature)
− − 87
26.6
nC
nC
GateDrain (“Miller”) Charge
Qgd
30.6 nC
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
IS (Body Diode)
ISM (Body Diode) Note 2
VSD TJ = +255C, IS = 50A, VGS = 0V, Note 4
trr TJ = +255C, IF = 50A, dIF/dt = 100A/.s
− − 150 A
− − 200 A
− − 2.5 V
− − 250 ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%.







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