Document
NTE2941 MOSFET N−Ch, Enhancement Mode High Speed Switch TO220 Full Pack Type Package
Features:Features: D Low Static Drain−Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package
D
G S
Absolute Maximum Ratings:
Drain−Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain−Gate Voltage (RGS = 1M+ , Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Drain CCuornretinntu, oIDus
PulsTTeCCd==(N++o21t50e50C25C).
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. . 28A 19.6A . 200A
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.5A Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Total
PDowerearteDiAsbsiopvaetio2n55(CTC.
= ..
+255C), .......
.P.D.
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. . . . 48W 0.52W/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +3005C
Thermal Resistance:
TMyapxicimaluCmaJsuen−ctoti−oSn−intko−(MCaosuen,tiRngthJsCur.fa. c. e.
.... flat,
........ smooth,
.... and
......... greased),
Maximum Junction−to−Ambient (Free Air Operation), RthJA . . . . . . . .
..... R. .th.C.S.
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1.92K/W . 0.5K/W 62.5K/W
Note 1. TJ = +255 to +1755C. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. L = 50.H, VDD = 25V, RG = 25+ , Starting TJ = +255C.
Rev. 10−13
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain−Source Breakdown Voltage Gate Threshold Voltage Gate−Source Leakage Forward Gate−Source Leakage Reverse Zero Gate Voltage Drain Current
Static Drain−Source ON Resistance Forward Transconductance
BVDSS VGS(th)
IGSS IGSS IDSS
RDS(on) gfs
VGS = 0V, ID = 250.A VDS = VGS, ID = 250.A VGS = 20V VGS = −20V VDS = Max. Rating, VGS = 0 VDS = 0.8 Max. Rating, TC = +1505C VGS = 10V, ID = 25A, Note 4 VDS . 50V, ID = 25A, Note 4
60 − − V
2.0 − 4.0 V
− − 100 nA
− − −100 nA
− − 250 .A
− − 1000 .A
− − 0.028 +
15 −
− mho s
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
− 2450 − pF
Output Capacitance
Coss
− 740 − pF
Reverse Transfer Capacitance
Crss
− 360 − pF
Turn−On Delay Time Rise Time Turn−Off Delay Time
td(on) tr
td(off)
V(MDOD S=F0E.5T
BsVwDitScSh,inIDg
=tim50eAs ,aZreO
= 9.1+ , essentially
independent of operating temperature)
− − −
− 32 ns − 210 ns − 75 ns
Fall Time
tf
− − 130 ns
Total Gate Charge (Gate−Source Plus Gate−Drain)
Gate−Source Charge
Qg Qgs
RVGatSin=g,1(0GVa,teIDc=ha5r0gAe,isVDeSss=en0t.ia8llMy ax. independent of operating temperature)
− − 87 − 26.6 −
nC nC
Gate−Drain (“Miller”) Charge
Qgd
− 30.6 − nC
Source−Drain Diode Ratings and Characteristics
Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time
IS (Body Diode) ISM (Body Diode) Note 2 VSD TJ = +255C, IS = 50A, VGS = 0V, Note 4 trr TJ = +255C, IF = 50A, dIF/dt = 100A/.s
− − 150 A − − 200 A − − 2.5 V − − 250 ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%.
.402 (10.2) Max .224 (5.7) Max
.295 (7.5) .669 (17.0) Max
GD S
.531 (13.5)
Min
.122 (3.1) Dia .165 (4.2)
.100 (2.54)
.059 (1.5) Max
.173 (4.4) Max
.114 (2.9) Max
.