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NTE2941 Dataheets PDF



Part Number NTE2941
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2941 DatasheetNTE2941 Datasheet (PDF)

NTE2941 MOSFET N−Ch, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features:Features: D Low Static Drain−Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package D G S Absolute Maximum Ratings: Drain−Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain−Gate Voltage (RGS = 1M+ , Note 1), .

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NTE2941 MOSFET N−Ch, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features:Features: D Low Static Drain−Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package D G S Absolute Maximum Ratings: Drain−Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain−Gate Voltage (RGS = 1M+ , Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Drain CCuornretinntu, oIDus PulsTTeCCd==(N++o21t50e50C25C). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A 19.6A . 200A Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.5A Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48mJ Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A Total PDowerearteDiAsbsiopvaetio2n55(CTC. = .. +255C), ....... .P.D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48W 0.52W/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +3005C Thermal Resistance: TMyapxicimaluCmaJsuen−ctoti−oSn−intko−(MCaosuen,tiRngthJsCur.fa. c. e. .... flat, ........ smooth, .... and ......... greased), Maximum Junction−to−Ambient (Free Air Operation), RthJA . . . . . . . . ..... R. .th.C.S. . . . . . . . . . . . . . . . . . . . . 1.92K/W . 0.5K/W 62.5K/W Note 1. TJ = +255 to +1755C. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. L = 50.H, VDD = 25V, RG = 25+ , Starting TJ = +255C. Rev. 10−13 Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain−Source Breakdown Voltage Gate Threshold Voltage Gate−Source Leakage Forward Gate−Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain−Source ON Resistance Forward Transconductance BVDSS VGS(th) IGSS IGSS IDSS RDS(on) gfs VGS = 0V, ID = 250.A VDS = VGS, ID = 250.A VGS = 20V VGS = −20V VDS = Max. Rating, VGS = 0 VDS = 0.8 Max. Rating, TC = +1505C VGS = 10V, ID = 25A, Note 4 VDS . 50V, ID = 25A, Note 4 60 − − V 2.0 − 4.0 V − − 100 nA − − −100 nA − − 250 .A − − 1000 .A − − 0.028 + 15 − − mho s Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz − 2450 − pF Output Capacitance Coss − 740 − pF Reverse Transfer Capacitance Crss − 360 − pF Turn−On Delay Time Rise Time Turn−Off Delay Time td(on) tr td(off) V(MDOD S=F0E.5T BsVwDitScSh,inIDg =tim50eAs ,aZreO = 9.1+ , essentially independent of operating temperature) − − − − 32 ns − 210 ns − 75 ns Fall Time tf − − 130 ns Total Gate Charge (Gate−Source Plus Gate−Drain) Gate−Source Charge Qg Qgs RVGatSin=g,1(0GVa,teIDc=ha5r0gAe,isVDeSss=en0t.ia8llMy ax. independent of operating temperature) − − 87 − 26.6 − nC nC Gate−Drain (“Miller”) Charge Qgd − 30.6 − nC Source−Drain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time IS (Body Diode) ISM (Body Diode) Note 2 VSD TJ = +255C, IS = 50A, VGS = 0V, Note 4 trr TJ = +255C, IF = 50A, dIF/dt = 100A/.s − − 150 A − − 200 A − − 2.5 V − − 250 ns Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%. .402 (10.2) Max .224 (5.7) Max .295 (7.5) .669 (17.0) Max GD S .531 (13.5) Min .122 (3.1) Dia .165 (4.2) .100 (2.54) .059 (1.5) Max .173 (4.4) Max .114 (2.9) Max .


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