N-Channel MOSFET. NTE2942 Datasheet

NTE2942 MOSFET. Datasheet pdf. Equivalent

Part NTE2942
Description N-Channel MOSFET
Feature NTE2942 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features:.
Manufacture NTE
Datasheet
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NTE2942
NTE2942
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
Features:
D Low Static DrainSource ON Resistance
D Improved Inductive Ruggedness
D Fast Switching Times
D Low Input Capacitance
D Extended Safe Operating Area
D TO220 Type Isolated Package
D
G
S
Absolute Maximum Ratings:
DrainSource Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
DrainGate Voltage (RGS = 1M+ , Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Drain CCuornretinntu, oIDus
PulsTTeCCd==(N++o21t50e50C25C).
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9.7A
6.8A
56A
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.5A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.7A
Total
PDowerearteDiAsbsiopvaetio2n55(CTC.
=
..
+255C),
.......
.P.D.
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. . . . 35W
0.28W/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +3005C
Thermal Resistance:
TMyapxicimaluCmaJsuenctotioSnintko(MCaosuen,tiRngthJsCur.fa. c. e.
....
flat,
........
smooth,
....
and
.........
greased),
Maximum JunctiontoAmbient (Free Air Operation), RthJA . . . . . . . .
.....
R. .th.C.S.
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3.57K/W
. 0.5K/W
62.5K/W
Note 1. TJ = +255 to +1505C.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 0.53mH, VDD = 25V, RG = 25+ , Starting TJ = +255C.
Rev. 1013



NTE2942
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage BVDSS VGS = 0V, ID = 250.A
100 − − V
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250.A
2.0 4.0 V
GateSource Leakage Forward
IGSS VGS = 20V
− − 100 nA
GateSource Leakage Reverse
IGSS VGS = 20V
− − −100 nA
Zero Gate Voltage Drain Current
IDSS VDS = Max. Rating, VGS = 0
− − 250 .A
VDS = 0.8 Max. Rating, TC = +1505C
− − 1000 .A
Static DrainSource ON Resistance RDS(on) VGS = 10V, ID = 7A, Note 4
− − 0.16 +
Forward Transconductance
gfs VDS . 50V, ID = 7A, Note 4
5.1 7.6 mhos
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
640 pF
Output Capacitance
Coss
240 pF
Reverse Transfer Capacitance
Crss
72 pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
td(on)
tr
td(off)
V(MDOD S=F0E.5T
BsVwDitSchS,inIDg
=tim14eAs ,aZreO
= 9.1+ ,
essentially
independent of operating temperature)
10 15
34 51
23 35
ns
ns
ns
Fall Time
tf
24 36 ns
Total Gate Charge
(GateSource Plus GateDrain)
GateSource Charge
GateDrain (“Miller”) Charge
Qg
Qgs
RVGatSin=g,1(0GVa,teIDc=ha1r4gAe,isVDeSss=en0t.ia8llMy ainxd.epen-
dent of operating temperature)
36
7.1
nC
nC
Qgd 14.6 nC
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
IS (Body Diode)
ISM (Body Diode) Note 2
VSD TJ = +255C, IS = 14A, VGS = 0V, Note 4
trr TJ = +255C, IF = 14A, dIF/dt = 100A/.s
− − 14 A
− − 56 A
− − 2.5 V
125 250 ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%.







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