N-Channel MOSFET. NTE2953 Datasheet

NTE2953 MOSFET. Datasheet pdf. Equivalent

Part NTE2953
Description N-Channel MOSFET
Feature NTE2953 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Appli.
Manufacture NTE
Datasheet
Download NTE2953 Datasheet



NTE2953
NTE2953
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
D
Applications:
D ACtoDC Power Supply Equipment
D Motor Control
D Server Power Supplies
D Synchronous Rectification
G
S
Absolute Maximum Ratings:
DrainSource Voltage (+25C TJ +175C), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
DrainGate Voltage (+25C TJ +175C, RGS = 20kW), VDSR . . . . . . . . . . . . . . . . . . . . . . . . . 100V
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Drain
C((VVurGGrSSen==t,11I00DVV,,
TTmmbb
=
=
+25C) .
+100C)
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70.4A
49.7A
Peak Drain Current (Pulsed, tp 10ms, Tmb = +25C), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 281A
Source Current (Tmb = +25C), IS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53.2A
Peak Source Current (Pulsed, tp 10ms, Tmb = +25C), ISM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 281A
NonR(eVpGeStit=ive10DVr,aTinJ(inSito) u=rc+e25AvCa,laIDnc=h7e0E.4nAe,rgVys,uEpDS1(A0L0)SV, Unclamped, RGS = 50W) . . . . 673mJ
Total Power Dissipation (Tmb = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63.8W
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +175C
Peak Soldering Temperature, Tsld(M) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C
Maximum Thermal Resistance, JunctiontoMounting Base, Rth(jmb) . . . . . . . . . . . . . . . . . 2.35K/W
Typical Thermal Resistance, JunctiontoAmbient, Rth(ja) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W
Isolation Capacitance (f = 1Mhz), Cisol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10pF
RMS Is(o5l0aHtioznVfolt6a0gHe,zV, RisoHl(RM6S5) %, Sinusoidal Waveform, Clean and Dust Free) . . . . . . . . . 2500V
Rev. 914



NTE2953
Electrical Characteristics:
Parameter
Static Characteristics
DrainSource Breakdown Voltage
GateSource Threshold Voltage
Drain Leakage Current
Gate Leakage Current
DrainSource ONState Resistance
Internal Gate Resistance (AC)
Dynamic Characteristics
Total Gate Charge
GateSource Charge
Pre-Threshold Gate-Source Charge
Post-Threshold Gate-Source Charge
GateDrain Charge
GateSource Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
SourceDrain Diode
SourceDrain Voltage
Reverse Recovery Time
Recovered Charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
QG(tot)
QGS
QGS(th)
QGS(th-pl)
QGD
VGS(pl)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
Qr
Test Conditions
VGS = 0V, ID = 250mA, TJ = +25C
VGS = 0V, ID = 250mA, TJ = 55C
VDS = VGS, ID = 1mA, TJ = +25C
VDS = VGS, ID = 1mA, TJ = +175C
VDS = VGS, ID = 1mA, TJ = 55C
VDS = 100V, VGS = 0, TJ = +25C
VDS = 100V, VGS = 0, TJ = +100C
VGS = 20V, VDS = 0V, TJ = +25C
VGS = 10V, ID = 15A, TJ = +25C
VGS = 10V, ID = 15A, TJ = +100C
VGS = 10V, ID = 15A, TJ = +175C
f = 1MHz
VGS = 10V, VDS = 50V, ID = 15A
VDS = 50V, ID = 15A
VTJGS= =+205V,CVDS = 50V, f = 1MHz,
RVDGS(ex=t)5=0V4,.7RWL,=TJ4W=,+V2G5SC= 10V,
IS = 10A, VGS = 0V, TJ = +25C
IS = 10A, dIS/dt = 100A/ms
VGS = 0, VDS = 50V
Min Typ Max Unit
100
90
2.0 3.0 4.0
1.0
− − 4.6
− − 10
− − 200
2 100
3.95 4.6
6.9 8.1
11.05 12.9
0.9
V
V
V
V
V
mA
mA
nA
mW
mW
mW
W
153
28
25
3
40
3.5
9900
660
381
35
40
170
71
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
0.72 1.2
63
173
V
ns
nC







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