N-Channel MOSFET. NTE2954 Datasheet

NTE2954 MOSFET. Datasheet pdf. Equivalent

Part NTE2954
Description N-Channel MOSFET
Feature NTE2954 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features.
Manufacture NTE
Datasheet
Download NTE2954 Datasheet




NTE2954
NTE2954
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
Features:
D Low Gate Charge: 147nC Typ
D Low Reverse Transfer Capacitance: 300pF Typ
D Fast Switching
D 100% Avalanche Tested
D Improved dv/dt Capability
D
G
S
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain
Current (Note
Continuous
1),
ID
PulsTTeCCd==(N++o21t50e0C2C).
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. 90A
. 68A
360A
DrainSource Diode Forward Current,
Continuous . . . . . . . . . . . . . . . . .
.IS.
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90A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2430mJ
Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mJ
Peak Diode Recovery (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Power
DDeisrsaitpeaAtiobnov(eTC+2=5+C25..C.).,
.P.D.
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. . . 83W
0.55W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +175C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Drain current limited by maximum junction temperature.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 0.3mH, IAS = 90A, VDD = 50V, RG = 25, Starting TJ = +25C.
Note 4. ISD 90A, di/dt 200A/s, VDD BVDSS, Starting TJ = +25C.
Rev. 914



NTE2954
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
DrainSource Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
GateBody Leakage Current
ON Characteristics
V(BR)DSS
BVTDJSS/
IDSS
IGSS
VGS = 0V, ID = 250A
ID = 250A, Referenced to +25C
VDS = 100V, VGS = 0
VDS = 80V, TC = +150C
VGS = 20V, VDS = 0V
Gate Threshold Voltage
Static DrainSource ON Resistance
Forward Transconductance
Dynamic Characteristics
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250A
VGS = 10V, ID = 45A
VDS = 40V, ID = 45A, Note 5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
TurnOn Delay Time
Rise Time
td(on)
tr
VNDoDte=650V, ID = 90A, RG = 25, Note5,
TurnOff Delay Time
td(off)
Fall Time
tf
Total Gate Charge
GateSource Charge
Qg
Qgs
VNDoSte=680V, ID = 90A, VGS = 10V, Note5,
GateDrain Charge
Qgd
DrainSource Diode Characteristics and Maximum Ratings
DrainSource Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS = 0V, IS = 90A
trr
Qrr
VNGotSe=50V, IS = 90A, dIF/dt = 100A/s,
Note 5. Pulse Test: Pulse width 300s, Duty cycle 2%.
Note 6. Essentially independent of operating temperature.
Min Typ Max Unit
100
0.1
V
V/C
−−
1 A
− − 10 A
− − 100 nA
2.0 4.0 V
8.5 10.0 m
72 S
4730 6150 pF
1180 1530 pF
300 390 pF
52 114 ns
492 944 ns
304 618 ns
355 720 ns
147 191 nC
28 nC
60 nC
− − 1.4 V
114
ns
0.54
C







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