N-Channel MOSFET. NTE2955 Datasheet

NTE2955 MOSFET. Datasheet pdf. Equivalent

Part NTE2955
Description N-Channel MOSFET
Feature NTE2955 MOSFET N−Channel, Enhancement Mode High Speed Switch Application: D CS Switch for CRT Displ.
Manufacture NTE
Datasheet
Download NTE2955 Datasheet




NTE2955
NTE2955
MOSFET
NChannel, Enhancement Mode
High Speed Switch
Application:
D CS Switch for CRT Display Monitor
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
DrainSource Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
GateSource Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Avalanche Drain Current (Pulsed, L = 200µH), IDA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Thermal Resistance, ChanneltoCase, Rth(chc) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.91°C/W
Isolation Voltage (AC for 1 minute, TerminaltoCase), VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
DrainSource Breakdown Voltage
GateSource Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static DrainSource ON Resistance
DrainSource OnState Voltage
Forward Transfer Admittance
V(BR)DSS
IGSS
IDSS
VGS(th)
RDS(on)
VDS(on)
|yfs|
VDS = 0V, ID = 1mA
VGS = ±20V, VDS = 0V
VDS = 250V, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 5A
VGS = 10V, ID = 5A
VGS = 10V, ID = 5A
Min Typ Max Unit
250 − − V
− − ±10 µA
− − 1.0 mA
2.0 3.0 4.0 V
0.40 0.52
2.0 2.6 V
9.0
S



NTE2955
Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Diode Forward Voltage
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 150V, ID = 5A, VGS = 10V,
RGEN = RGS = 50
IS = 5A, VGS = 0V
950
90
25
20
25
150
40
0.95
pF
pF
pF
ns
ns
ns
ns
V
.114 (2.9)
.181 (4.6)
Max
.252
(6.4)
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
.622
(15.0)
Max
.118
(3.0)
Max
.531
(13.5)
Min
GD S
.098 (2.5)
.100 (2.54)







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