N-Channel MOSFET. NTE2956 Datasheet

NTE2956 MOSFET. Datasheet pdf. Equivalent

Part NTE2956
Description N-Channel MOSFET
Feature NTE2956 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features.
Manufacture NTE
Datasheet
Download NTE2956 Datasheet




NTE2956
NTE2956
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
Features:
D RDS(on) = 380mW Max @ VGS = 10V, ID = 8A
D Low Gate Charge: 32nC Typ
D Low CRSS: 20pF Typ
D 100% Avalanche Tested
D
Applications:
D LCD/LED/PDP TV
D Lighting
D Uninterruptible Power Supply
G
S
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain
Current (Note
Continuous
1),
ID
PulsTTeCCd==(N++o21t50e0C2C).
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16A
9.6A
64A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 780mJ
Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Power
DDeisrsaitpeaAtiobnov(eTC+2=5+C25..C.).,
.P.D.
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. . 38.5W
0.3W/C
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Maximum Lead temperature (During Soldering, 1/8” from case, 5 sec ), TL . . . . . . . . . . . . . . +300C
Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3C/W
Maximum Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Drain current limited by maximum junction temperature.
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. L = 5.5mH, IAS = 16A, VDD = 50V, RG = 25W, starting TJ = +25C.
Note 4. ISD 16A, di/dt 200A/ms, VDD V(BR)DSS, starting TJ = +25C.
Rev. 714



NTE2956
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
DrainSource Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250mA
500 − − V
Breakdown Voltage Temperature Coefficient DV(BR)DSS/DTJ ID = 250mA, Referenced to +25_C 0.5
V/_C
Zero Gate Voltage Drain Current
IDSS
VDS = 500V, VGS = 0
− − 1.0 mA
VDS = 400V, TC = +125_C
− − 10 mA
GateBody Leakage Current
IGSS
VGS = 30V, VDS = 0V
− − 100 nA
ON Characteristics
Gate Threshold Voltage
Static DrainSource ON Resistance
Forward Transconductance
Dynamic Characteristics
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250mA
VGS = 10V, ID = 8A
VDS = 40V, ID = 8A
3.0 5.0
0.31 0.38
23
V
W
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Ciss
Coss
Crss
Vf =GS1M= H0Vz, VDS = 25V,
TurnOn Delay Time
Rise Time
td(on)
tr
VRDGD==2255W0,VN, oIDte=516A,
TurnOff Delay Time
td(off)
Fall Time
tf
Total Gate Charge
GateSource Charge
Qg
Qgs
VVDGDS
=
=
41000VV, N, IoDte=
16A,
5
GateDrain Charge
Qgd
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
DrainSource Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS = 0V, IS = 16A
trr
Qrr
dVIGFS/d=t =0V1,0I0SA=/m1s6A,
1495 1945 pF
235 310 pF
20 30 pF
40 90 ns
150 310 ns
65 140 ns
80 170 ns
32 45 nC
8.5 nC
14 nC
− − 9.2 A
− − 37 A
− − 1.4 V
490
ns
5.0 mC
Note 5. Essentially independent of operating temperature typical characteristics.







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