N-Channel MOSFET. NTE2958 Datasheet

NTE2958 MOSFET. Datasheet pdf. Equivalent

Part NTE2958
Description N-Channel MOSFET
Feature NTE2958 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Applicat.
Manufacture NTE
Datasheet
Download NTE2958 Datasheet




NTE2958
NTE2958
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
Applications:
D SMPS
D DCDC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
D
G
S
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
DrainSource Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
GateSource Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain CCuornretinntu, oIDus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, ChanneltoCase, Rth(chc) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.13C/W
Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Electrical Characteristics: (Tch = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
DrainSource Breakdown Voltage
GateSource Breakdown Voltage
GateSource Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static DrainSource ON Resistance
DrainSource OnState Voltage
Forward Transfer Admittance
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(th)
RDS(on)
VDS(on)
|yfs|
VDS = 0V, ID = 1mA
VDS = 0V, IG = 100A
VGS = 25V, VDS = 0V
VDS = 700V, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 5A
VGS = 10V, ID = 5A
VGS = 10V, ID = 5A
Min Typ Max Unit
700 − − V
30
−−
−−
V
10 A
1.0 mA
2.0 3.0 4.0 V
1.0 1.3
5.0 6.5 V
4.8 8.0
S
Rev. 1013



NTE2958
Electrical Characteristics (Cont’d): (Tch = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
1380
150
pF
pF
Reverse Transfer Capacitance
Crss
32 pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
td(on)
tr
td(off)
tf
RVDGDEN==20R0GVS,
I=D
= 5A,
50
VGS
=
10V,
25
33
170
55
ns
ns
ns
ns
Diode Forward Voltage
VSD IS = 5A, VGS = 0V
1.0 1.5 V
.114 (2.9)
.181 (4.6)
Max
.252
(6.4)
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
.622
(15.0)
Max
.531
(13.5)
Min
.118
(3.0)
Max
GD S
.098 (2.5)
.100 (2.54)







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