N-Channel MOSFET. NTE2959 Datasheet

NTE2959 MOSFET. Datasheet pdf. Equivalent

Part NTE2959
Description N-Channel MOSFET
Feature NTE2959 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Applicat.
Manufacture NTE
Datasheet
Download NTE2959 Datasheet




NTE2959
NTE2959
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
Applications:
D SMPS
D DCDC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
D
G
S
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
DrainSource Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
GateSource Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain CCuornretinntu, oIDus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, ChanneltoCase, Rth(chc) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.17C/W
Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Electrical Characteristics: (Tch = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
DrainSource Breakdown Voltage
GateSource Breakdown Voltage
GateSource Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static DrainSource ON Resistance
DrainSource OnState Voltage
Forward Transfer Admittance
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(th)
RDS(on)
VDS(on)
|yfs|
VDS = 0V, ID = 1mA
VDS = 0V, IG = 100A
VGS = 25V, VDS = 0V
VDS = 900V, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 2A
VGS = 10V, ID = 2A
VGS = 10V, ID = 2A
Min Typ Max Unit
900 − − V
30
−−
−−
V
10 A
1.0 mA
2.0 3.0 4.0 V
2.15 2.80
4.3 5.6 V
3.0 5.0
S
Rev. 1013



NTE2959
Electrical Characteristics (Cont’d): (Tch = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
1050
100
pF
pF
Reverse Transfer Capacitance
Crss
20 pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
td(on)
tr
td(off)
tf
RVDGDEN==20R0GVS,
I=D
= 2A,
50
VGS
=
10V,
20
18
110
35
ns
ns
ns
ns
Diode Forward Voltage
VSD IS = 2A, VGS = 0V
1.0 1.5 V
.114 (2.9)
.181 (4.6)
Max
.252
(6.4)
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
.622
(15.0)
Max
.531
(13.5)
Min
.118
(3.0)
Max
GD S
.098 (2.5)
.100 (2.54)







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