Purpose Amplifier. NTE296 Datasheet

NTE296 Amplifier. Datasheet pdf. Equivalent

Part NTE296
Description Silicon PNP Transistor General Purpose Amplifier
Feature NTE296 Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP tra.
Manufacture NTE
Datasheet
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NTE296
NTE296
Silicon PNP Transistor
General Purpose Amplifier
Description:
The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applica-
tions requiring high breakdown voltages, low saturation voltages and low capacitance.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
IC = 1mA, IB = 0, Note 1
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 200V, IE = 0
VBE = 3V, IC = 0
Min Typ Max Unit
300 – – V
300 – – V
5––V
– – 0.2 µA
– – 0.1 µA



NTE296
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
IC = 30mA, IB = 3mA
IC = 30mA, IB = 3mA
25
30
30
– – 0.75 V
– – 0.9 V
Current GainBandwidth Product
CollectorBase Capacitance
fT IC = 10mA, VCE = 20V, f = 10MHz 45
Ccb VCB = 20V, IE = 0, f = 1MHz
––
MHz
8 pF
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.380 (9.56)
.180 (4.57)
C .132 (3.35) Dia
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.325
(9.52)
.070 (1.78) x 45°
Chamf
.050 (1.27)
.400
(10.16)
Min
E BC
.100 (2.54)
.100 (2.54)







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