Speed Switch. NTE2967 Datasheet

NTE2967 Switch. Datasheet pdf. Equivalent

Part NTE2967
Description MOSFET N-Channel / Enhancement Mode High Speed Switch
Feature NTE2967 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D Motor Control D Lamp Co.
Manufacture NTE
Datasheet
Download NTE2967 Datasheet




NTE2967
NTE2967
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D Motor Control
D Lamp Control
D Solenoid Control
D DC–DC Converter
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A
Avalanche Drain Current (Pulsed, L = 100µH), IDA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Source Current, IS
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83°C/W
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage
Gate–Source Leakage
V(BR)DSS VDS = 0V, ID = 1mA
IGSS VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 100V, VGS = 0
Gate Threshold Voltage
VGS(th) VDS = 10V, ID = 1mA
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
RDS(on)
VDS(on)
|yfs|
VGS = 10V, ID = 35A
VGS = 10V, ID = 35A
VGS = 10V, ID = 35A
Min Typ Max Unit
100 – – V
– – ±0.1 µA
– – 0.1 mA
2.0 3.0 4.0 V
– 14 20 m
– 0.49 0.70 V
– 53 –
S



NTE2967
Electrical Characteristics (Contd): (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 10V, f = 1MHz
6540
1150
pF
pF
Reverse Transfer Capacitance
Crss
500 pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 50V, ID = 35A, VGS = 10V,
RGEN = RGS = 50
95
175
330
190
ns
ns
ns
ns
Diode Forward Voltage
Reverse Recovery Time
VSD IS = 35A, VGS = 0V
trr IS = 70A, dIF/dt = 100A/µs
1.0 1.5 V
120 ns
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G DS
.215 (5.47)







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