Speed Switch. NTE2972 Datasheet

NTE2972 Switch. Datasheet pdf. Equivalent

Part NTE2972
Description MOSFET N-Channel / Enhancement Mode High Speed Switch
Feature NTE2972 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter .
Manufacture NTE
Datasheet
Download NTE2972 Datasheet



NTE2972
NTE2972
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D SMPS
D DC–DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83°C/W
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage
Gate–Source Breakdown Voltage
Gate–Source Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(th)
RDS(on)
VDS(on)
|yfs|
VDS = 0V, ID = 1mA
VDS = 0V, IG = ±100µA
VGS = ±25V, VDS = 0V
VDS = 700V, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 5A
VGS = 10V, ID = 5A
VGS = 10V, ID = 5A
Min Typ Max Unit
700 – – V
±30 – – V
– – ±10 µA
– – 1.0 mA
2.0 3.0 4.0 V
– 1.0 1.3
– 5.0 6.5 V
4.8 8.0 –
S



NTE2972
Electrical Characteristics (Contd): (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
1380
150
32
pF
pF
pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Diode Forward Voltage
td(on)
tr
td(off)
tf
VSD
VDD = 200V, ID = 5A, VGS = 10V,
RGEN = RGS = 50
IS = 5A, VGS = 0V
25 ns
33 ns
170 ns
55 ns
1.5 2.0 V
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G DS
.215 (5.47)







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