Speed Switch. NTE2973 Datasheet

NTE2973 Switch. Datasheet pdf. Equivalent

Part NTE2973
Description MOSFET N-Channel / Enhancement Mode High Speed Switch
Feature NTE2973 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter .
Manufacture NTE
Datasheet
Download NTE2973 Datasheet




NTE2973
NTE2973
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D SMPS
D DC–DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45°C/W
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage
Gate–Source Breakdown Voltage
Gate–Source Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(th)
RDS(on)
VDS(on)
|yfs|
VDS = 0V, ID = 1mA
VDS = 0V, IG = ±100µA
VGS = ±25V, VDS = 0V
VDS = 900V, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 7A
VGS = 10V, ID = 7A
VGS = 10V, ID = 7A
Min Typ Max Unit
900 – – V
±30 – – V
– – ±10 µA
– – 1.0 mA
2.0 3.0 4.0 V
– 0.63 0.85
– 4.41 5.95 V
9 15 –
S



NTE2973
Electrical Characteristics (Contd): (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
2900
290
50
pF
pF
pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Diode Forward Voltage
td(on)
tr
td(off)
tf
VSD
VDD = 200V, ID = 7A, VGS = 10V,
RGEN = RGS = 50
IS = 7A, VGS = 0V
45 ns
65 ns
325 ns
100 ns
1.0 1.5 V
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G DS
.215 (5.47)







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