Speed Switch. NTE2975 Datasheet

NTE2975 Switch. Datasheet pdf. Equivalent

Part NTE2975
Description MOSFET N-Channel / Enhancement Mode High Speed Switch
Feature NTE2975 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Advanced Process Technology.
Manufacture NTE
Datasheet
Download NTE2975 Datasheet



NTE2975
NTE2975
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Advanced Process Technology
D Ultra Low On–State Resistance
D Dynamic dv/dt Rating
D +175°C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
Absolute Maximum Ratings:
Drain Current, ID
Continuous (VGS = 10V)
TC = +25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37A
Pulse (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107W
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W/°C
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11mJ
Single Pulse Avalanche Energy (Note 3, Note 4), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152mJ
Peak Diode Recovery (Note 5), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), TL . . . . . . . . . . . . . . . +300°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W
Typical Thermal Resistance, Case–to–Sink (Flat, greased surface), RthCS . . . . . . . . . . . . . 0.5°C/W
Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 39A.
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. Starting TJ = +25°C, L = 389µH, RG = 25, IAS = 28A.
Note 4. This is a calculated value limited to TJ = +175°C.
Note 5. ISD 28A, di/dt 220A/µs, VDD V(BR)DSS, TJ +175°C



NTE2975
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
DrainSource Breakdown Voltage
V(BR)DSS VGS = 0V, ID = 250µA
55
Breakdown Voltage Temperature
Coefficient
Static DrainSource OnResistance
V(BR)DSS Reference to +25°C, ID = 1mA
TJ
RDS(on) VGS = 10V, ID = 28A, Note 6
0.057
––
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
2.0
Forward Transconductance
gfs VDS = 25V, ID = 28A, Note 6
19
DrainSource Leakage Current
IDSS VDS = 55V, VGS = 0
––
VDS = 44V, VGS = 0, TJ = +150°C
GateSource Forward Leakage Current
IGSS VGS = 20V
––
VGS = 20V
––
Total Gate Charge
QG VGS = 10V, ID = 28A, VDS = 44V
GateSource Charge
QGS
––
GateDrain (Miller) Charge
QGD
––
TurnOn Delay Time
Rise Time
td(on)
tr
VGS = 10V, VDD = 28V, ID = 28A,
RG = 12
14
76
TurnOff Delay Time
td(off)
52
Fall Time
tf
57
Internal Drain Inductance
Internal Source Inductance
LD Between lead, .250 (6mm) from 4.5
LS package and center of die contact 7.5
Input Capacitance
Ciss VDS = 25V, VGS = 0, f = 1MHz
1696
Output Capacitance
Coss
407
Reverse Transfer Capacitance
Crss
110
SourceDrain Ratings and Characteristics
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS
ISM
VF(SD)
Note 2
TJ = +25°C, IS = 28A, VGS = 0,
Note 6
––
––
––
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
trr TJ = +25°C, IF = 28A,
Qrr di/dt = 100A/µs, Note 6
67
208
ton Intristic turnon time is negligible
(turnon is dominated by LS + LD)
Max
16.5
4.0
25
250
100
100
72
11
26
53
180
1.3
101
312
Unit
V
V/°C
m
V
S
µA
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
pF
pF
pF
A
A
V
ns
nC
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 6. Pulse width 400µs, duty cycle 2%.







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