Level MOSFET. NTE2980 Datasheet

NTE2980 MOSFET. Datasheet pdf. Equivalent

Part NTE2980
Description Logic Level MOSFET
Feature NTE2980 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Type Package Feature.
Manufacture NTE
Datasheet
Download NTE2980 Datasheet




NTE2980
NTE2980
Logic Level MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO251 Type Package
Features:
D Dynamic dv/dt Rating
D Logic Level Gate Drive
D RDS(on) Specified at VGS = 4V & 5V
D Fast Switching
D TO251 Type Package
D
G
S
Absolute Maximum Ratings:
Drain
CCPuuorlnrsTTeteiCCnndtu==,(oIN++Duo21st50e(50VC15GC)S. ...=...
5V)
....
....
....
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7.7A
4.9A
31A
Total
PDowerearteDiAsbsiopvaetio2n55(CTC.
=
..
+255C),
.......
.P.D.
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. . . . 25W
0.20W/5C
Total
Power Dissipation (PC
Derate Above 255C .
Board
......
Mount,
.......
T. .C.
= +255C,
........
Note
.....
2),
...
P. .D.
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. . . . 2.5W
0.02W/5C
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10V
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +2605C
Maximum Thermal Resistance:
JJuunnccttiioonn−−ttoo−−CAmasbeie, nRtth(JPCCB. .M. .o.u.n.t.,
JunctiontoAmbient, RthJA . . . . . .
.....
Note
.....
...
2),
...
.....
R. .th.J.A.
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5.05C/W
505C/W
1105C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. When mounted on a 1” square PCB (FR4 or G10 material).
Note 3. L = 9245 H, VDD = 25V, RG = 253 , Starting TJ = +255C, IAS = 7.7A.
Note 4. ISD 3 10A, di/dt 3 90A/5 s, VDD 3 V(BR)DSS, TJ 3 +1505C.
Rev. 1013



NTE2980
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
BVDSS VGS = 0V, ID = 2505 A
Breakdown Voltage Temperature
Coefficient
+V(B+RT)JDSS/ Reference to +255C, ID = 1mA
Static DrainSource ON Resistance RDS(on) VGS = 5V, ID = 4.6A, Note 5
VGS = 4V, ID = 3.9A, Note 4
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 2505 A
Forward Transconductance
gfs VDS = 25V, ID = 4.6A, Note 5
DraintoSource Leakage Current
IDSS
VDS = 60V, VGS = 0
VDS = 48V, VGS = 0V, TC = +1255C
GateSource Leakage Forward
IGSS
VGS = 10V
GateSource Leakage Reverse
IGSS
VGS = 10V
Total Gate Charge
Qg VGS = 5V, ID = 10A, VDS = 48V, Note 5
GateSource Charge
Qgs
GateDrain (“Miller”) Charge
Qgd
TurnOn Delay Time
Rise Time
td(on)
tr
VRDDD==23.803V,, NIDo=te150A, RG = 123 ,
TurnOff Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
Internal Source Inductance
LD Between lead, 6mm (0.25”) from
LS package and center of die contact
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SourceDrain Diode Ratings and Characteristics
60 − − V
0.073 V/5C
− − 0.20 3
− − 0.28 3
1.0 2.0 V
3.4
mhos
− − 25 5 A
− − 250 5 A
− − 100 nA
− − −100 nA
− − 8.4 nC
− − 3.5 nC
− − 6.0 nC
9.3 ns
110 ns
17 ns
26 ns
4.5 nH
7.5 nH
400 pF
170 pF
42 pF
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
IS (Body Diode)
− − 7.7 A
ISM (Body Diode) Note 1
− − 31 A
VSD TJ = +255C, IS = 7.7A, VGS = 0V, Note 5
1.6 V
trr
Qrr
TNJot=e+5255C, IF = 10A, di/dt = 100A/5 s,
65 130 ns
0.33 0.65 5 C
ton
Intrinsic turnon time is neglegible
(turnon is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.







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