N-Channel MOSFET. NTE2985 Datasheet

NTE2985 MOSFET. Datasheet pdf. Equivalent

Part NTE2985
Description N-Channel MOSFET
Feature NTE2985 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Feature.
Manufacture NTE
Datasheet
Download NTE2985 Datasheet




NTE2985
NTE2985
Logic Level MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Type Package
Features:
D Dynamic dv/dt Rating
D Logic Level Gate Drive
D RDS(on) Specified at VGS = 4V & 5V
D +1755C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
D
G
Absolute Maximum Ratings:
S
Drain
CCPuuorlnrsTTeteiCCnndtu==,(oIN++Duo21st50e(50VC15GC)S. ...=...
5V)
....
....
....
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
. 30A
. 21A
110A
Total
PDowerearteDiAsbsiopvaetio2n55(CTC.
=
..
+255C),
.......
.P.D.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
. . . . 88W
0.59W/5C
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10V
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +3005C
Mounting Torque, 632 or M3 Screw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfwin (1.1 Nwm)
Thermal Resistance:
TMyapxicimaluCmaJsuenctotioSnintko(MCaosuen,tiRngthJsCur.fa. c. e.
....
flat,
........
smooth,
....
and
.........
greased),
Maximum JunctiontoAmbient (Free Air Operation), RthJA . . . . . . . .
.....
R. .th.C.S.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
1.7K/W
0.5K/W
62K/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 2853H, VDD = 25V, RG = 25. , Starting TJ = +1755C, IAS = 30A.
Note 3. ISD 3 30A, di/dt 3 200A/3s, VDD 3 V(BR)DSS, TJ 3 +1755C.
Rev. 1013



NTE2985
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
BVDSS VGS = 0V, ID = 2503A
Breakdown Voltage Temperature
Coefficient
+V(B+RT)JDSS/ Reference to +255C, ID = 1mA
Static DrainSource ON Resistance RDS(on) VGS = 5V, ID = 18A, Note 4
VGS = 4V, ID = 15A, Note 4
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 2503A
Forward Transconductance
gfs VDS . 25V, ID = 18A, Note 4
DraintoSource Leakage Current
IDSS
VDS = 60V, VGS = 0
VDS = 48V, VGS = 0V, , TC = +1505C
GateSource Leakage Forward
IGSS
VGS = 10V
GateSource Leakage Reverse
IGSS
VGS = 10V
Total Gate Charge
Qg VGS = 5V, ID = 30A, VDS = 48V
GateSource Charge
Qgs
GateDrain (“Miller”) Charge
Qgd
TurnOn Delay Time
Rise Time
td(on)
tr
VRDDD==13.00.V, ID = 30A, RG = 6.0. ,
TurnOff Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
Internal Source Inductance
LD Between lead, 6mm (0.25”) from
LS package and center of die contact
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SourceDrain Diode Ratings and Characteristics
60 − − V
0.07 V/5C
− − 0.05 .
− − 0.07 .
1.0 2.0 V
12 − − mhos
− − 25 3A
− − 250 3A
− − 100 nA
− − −100 nA
− − 35 nC
− − 7.1 nC
− − 25 nC
14 ns
170 ns
30 ns
56 ns
4.5 nH
7.5 nH
1600 pF
660 pF
170 pF
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
IS (Body Diode)
− − 30 A
ISM (Body Diode) Note 1
− − 110 A
VSD TJ = +255C, IS = 30A, VGS = 0V, Note 4 − − 1.6 V
trr
Qrr
TNJot=e+4255C, IF = 30A, di/dt = 100A/3s,
120 180 ns
0.7 1.3 3C
ton
Intrinsic turnon time is neglegible
(turnon is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width 3 3003s, Duty Cycle 3 2%.







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)