Document
NTE2988 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−52 Type Package
Description: The NTE2988 is an N−Channel, enhancement mode, power field effect transistor in a TO−52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers.
Features: D High Input Impedance D Extremely Fast Switching D Rugged−Dissipation Limited SOA D Internal Drain−Source Diode
D
Benefits: D Reduced Component Count D Simpler Designs − Directly Interfaces CMOS & TTL D Improved Circuit Performance D Increased Reliability
G S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain−Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Peak Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Gate−Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V, −0.3V
Drain Current
Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
MaximuLmineDairssDipearatitoinng(TFCac=to+r 2.5..C.).
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. . 315mW 2.5mW/C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +300C
Note 1. Limited by package dissipation.
Note 2. Pulse test − 80ms to 300ms, 1% duty cycle.
Rev. 5−16
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Drain−Source Breakdown Voltage Gate Threshold Voltage Gate−Body Leakage Zero Gate Voltage Drain Current On−State Drain Current
Static−Drain−Source On−State Resistance
Dynamic Characteristics
BVDSS VGS(th) IGSS
IDSS ID(on)
rDS(on)
ID = 1000mA, VGS = 0 VDS = VGS, ID = 1mA VGS = 15V, VDS = 0 VDS = 50V, VGS = 0 VGS = 5V, ID = 0.2A, Note 2 VGS = 10V, ID = 0.5A, Note 2 VGS = 5V, ID = 0.2A, Note 2 VGS = 10V, ID = 0.5A, Note 2
Forward Transconductance
gfs VDS = 15V, ID = 0.5A, Note 2
Input Capacitance
Ciss VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
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