N-Channel MOSFET. NTE2988 Datasheet

NTE2988 MOSFET. Datasheet pdf. Equivalent

Part NTE2988
Description N-Channel MOSFET
Feature NTE2988 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−52 Type Package Description: The NT.
Manufacture NTE
Datasheet
Download NTE2988 Datasheet




NTE2988
NTE2988
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO52 Type Package
Description:
The NTE2988 is an NChannel, enhancement mode, power field effect transistor in a TO52 type
package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers.
Features:
D High Input Impedance
D Extremely Fast Switching
D RuggedDissipation Limited SOA
D Internal DrainSource Diode
D
Benefits:
D Reduced Component Count
D Simpler Designs Directly Interfaces CMOS & TTL
D Improved Circuit Performance
D Increased Reliability
G
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
DrainSource Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
DrainGate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Peak Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
GateSource Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V, 0.3V
Drain Current
Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2A
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
MaximuLmineDairssDipearatitoinng(TFCac=to+r 2.5..C.).
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. . 315mW
2.5mW/C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +300C
Note 1. Limited by package dissipation.
Note 2. Pulse test 80ms to 300ms, 1% duty cycle.
Rev. 516



NTE2988
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
DrainSource Breakdown Voltage
Gate Threshold Voltage
GateBody Leakage
Zero Gate Voltage Drain Current
OnState Drain Current
StaticDrainSource OnState
Resistance
Dynamic Characteristics
BVDSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
ID = 1000mA, VGS = 0
VDS = VGS, ID = 1mA
VGS = 15V, VDS = 0
VDS = 50V, VGS = 0
VGS = 5V, ID = 0.2A, Note 2
VGS = 10V, ID = 0.5A, Note 2
VGS = 5V, ID = 0.2A, Note 2
VGS = 10V, ID = 0.5A, Note 2
Forward Transconductance
gfs VDS = 15V, ID = 0.5A, Note 2
Input Capacitance
Ciss VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
Common Source Output Capacitance Coss
TurnOn Time
TurnOff Time
tON
tOFF
VIDD=D
= 15V,
0.6A
RL
=
23W,
Rg
=
25W,
DrainSource Diode Characteristics
Forward ON Voltage
Reverse Recovery Time
VSD IS = 0.5A, VGS = 0, Note 2
trr VGS = 0, IF = IR = 0.5A
Note 2. Pulse test 80ms to 300ms, 1% duty cycle.
Min Typ Max Unit
60 − − V
0.8 2.5 V
− − 100 nA
− − 10 mA
− − 1.5 V
− − 2.5 V
− − 7.5 W
− − 5.0 W
200
−−
−−
−−
−−
−−
mS
60 pF
5 pF
25 pF
10 ns
10 ns
− −0.85
160
V
ns
.150 (3.81)
Max
.230 (5.84) Dia Max
195 (4.95) Dia Max
.500 (12.7)
Min
Source
.019 (0.5) Dia
Gate
Drain/Case
45
.040 (1.01)







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