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NTE2988 Dataheets PDF



Part Number NTE2988
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2988 DatasheetNTE2988 Datasheet (PDF)

NTE2988 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−52 Type Package Description: The NTE2988 is an N−Channel, enhancement mode, power field effect transistor in a TO−52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers. Features: D High Input Impedance D Extremely Fast Switching D Rugged−Dissipation Limited SOA D Internal Drain−Source Diode D Benefits: D Reduced Component Count D Simpler Designs − Directly Interfaces CMOS .

  NTE2988   NTE2988



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NTE2988 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−52 Type Package Description: The NTE2988 is an N−Channel, enhancement mode, power field effect transistor in a TO−52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers. Features: D High Input Impedance D Extremely Fast Switching D Rugged−Dissipation Limited SOA D Internal Drain−Source Diode D Benefits: D Reduced Component Count D Simpler Designs − Directly Interfaces CMOS & TTL D Improved Circuit Performance D Increased Reliability G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain−Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Peak Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Gate−Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V, −0.3V Drain Current Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A MaximuLmineDairssDipearatitoinng(TFCac=to+r 2.5..C.). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315mW 2.5mW/C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +300C Note 1. Limited by package dissipation. Note 2. Pulse test − 80ms to 300ms, 1% duty cycle. Rev. 5−16 Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Static Characteristics Drain−Source Breakdown Voltage Gate Threshold Voltage Gate−Body Leakage Zero Gate Voltage Drain Current On−State Drain Current Static−Drain−Source On−State Resistance Dynamic Characteristics BVDSS VGS(th) IGSS IDSS ID(on) rDS(on) ID = 1000mA, VGS = 0 VDS = VGS, ID = 1mA VGS = 15V, VDS = 0 VDS = 50V, VGS = 0 VGS = 5V, ID = 0.2A, Note 2 VGS = 10V, ID = 0.5A, Note 2 VGS = 5V, ID = 0.2A, Note 2 VGS = 10V, ID = 0.5A, Note 2 Forward Transconductance gfs VDS = 15V, ID = 0.5A, Note 2 Input Capacitance Ciss VDS = 25V, f = 1MHz Reverse Transfer Capacitance .


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