Infrared-Emitting Diode. NTE3029 Datasheet

NTE3029 Diode. Datasheet pdf. Equivalent

Part NTE3029
Description Infrared-Emitting Diode
Feature NTE3029A Infrared–Emitting Diode Description: The NTE3029A 940nm LED is a multi–purpose device desig.
Manufacture NTE
Datasheet
Download NTE3029 Datasheet




NTE3029
NTE3029A
Infrared–Emitting Diode
Description:
The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications.
This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long
lifetime.
Features:
D Low Cost
D Low Degradation
D New Mold Technology Improves Performance under Variable Environmental Conditions
D New Lens Design offers Improved Optical Performance
Applications:
D Low Bit Rate Communication Systems
D Keyboards
D Coin Handlers
D Paper Handlers
D Touch Screens
D Shaft Encoders
D General Purpose Interruptive and Reflective
Event Sensors
Absolute Maximum Ratings:
Reverse Breakdown Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Forward Current, IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Device Power Dissipation (TA = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Ambient Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Lead Temperature (During Soldering, Note 3), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. The NTE3029A is a discontinued device and has been replaced by NTE3029B.
Note 2 Measured with device soldered into a typical printed circuit board.
Note 3 Maximum exposure time: 5sec. Minimum of 1/16 inch from the case. A heat sink should
be applied in order to prevent the case temperature from exceeding +100°C.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol Test Conditions
Reverse Leakage Current
IR VR = 6V
Forward Voltage
VF IF = 50mA
Temperature Coefficient of Forward Voltage VF
Capacitance
C V = 0V, f = 1MHz
Min Typ Max Unit
– 0.05 100 µA
– 1.3 1.5 V
– –1.6 – mV/°C
– 24 50 pF



NTE3029
Optical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Peak Emission Wavelength
Spectral Half Power Wavelength
λP IF = 50mA
Spectral Output Temperature Shift
Axial Power Output Intensity
Intensity Per Unit Solid Angle
Power HalfAngle
PO IF = 20mA, Note 4
Ee IF = 20mA, Note 4
Rise Time and Fall Time
tr, tf
Min Typ Max Unit
930 940 950
nm
48
nm
0.3
nm/°C
50 150 µW/ sq cm
0.2 0.65 mW/Sr
±20
°
1.0
µs
Note 4 Measured using a 11.28 mm diameter detector placed 21 mm away from the device under
test.
.125
(3.17)
.160 (4.06)
.045 (1.14) Dia
.120
(3.04)
.168
(4.27)
.750
(19.05)
Max
.020 (.508)
KA
.103
(2.62)
.100 (2.54)
.060 (1.52)







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