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NTE3029 Dataheets PDF



Part Number NTE3029
Manufacturers NTE
Logo NTE
Description Infrared-Emitting Diode
Datasheet NTE3029 DatasheetNTE3029 Datasheet (PDF)

NTE3029A Infrared–Emitting Diode Description: The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications. This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long lifetime. Features: D Low Cost D Low Degradation D New Mold Technology Improves Performance under Variable Environmental Conditions D New Lens Design offers Improved Optical Performance Applications: D Low Bit Rate Communication Systems D Keyboards D Coin Handlers.

  NTE3029   NTE3029


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NTE3029A Infrared–Emitting Diode Description: The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications. This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long lifetime. Features: D Low Cost D Low Degradation D New Mold Technology Improves Performance under Variable Environmental Conditions D New Lens Design offers Improved Optical Performance Applications: D Low Bit Rate Communication Systems D Keyboards D Coin Handlers D Paper Handlers D Touch Screens D Shaft Encoders D General Purpose Interruptive and Reflective Event Sensors Absolute Maximum Ratings: Reverse Breakdown Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Device Power Dissipation (TA = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C Ambient Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Lead Temperature (During Soldering, Note 3), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Note 1. The NTE3029A is a discontinued device and has been replaced by NTE3029B. Note 2 Measured with device soldered into a typical printed circuit board. Note 3 Maximum exposure time: 5sec. Minimum of 1/16 inch from the case. A heat sink should be applied in order to prevent the case temperature from exceeding +100°C. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Reverse Leakage Current Forward Voltage Temperature Coefficient of Forward Voltage Capacitance Symbol IR VF ∆VF C V = 0V, f = 1MHz Test Conditions VR = 6V IF = 50mA Min – – – – Typ 0.05 1.3 –1.6 24 Max 100 1.5 – 50 Unit µA V mV/°C pF Optical Characteristics: (TA = +25°C unless otherwise specified) Parameter Peak Emission Wavelength Spectral Half Power Wavelength Spectral Output Temperature Shift Axial Power Output Intensity Intensity Per Unit Solid Angle Power Half–Angle Rise Time and Fall Time PO Ee Ω tr, tf IF = 20mA, Note 4 IF = 20mA, Note 4 Symbol λP Test Conditions IF = 50mA Min 930 – – 50 0.2 – – Typ 940 48 0.3 150 0.65 ±20 1.0 Max 950 – – – – – – Unit nm nm nm/°C µW/ sq cm mW/Sr ° µs Note 4 Measured using a 11.28 mm diameter detector placed 21 mm away from the device under test. .160 (4.06) .045 (1.14) Dia .125 (3.17) .120 (3.04) .168 (4.27) .750 (19.05) Max .020 (.508) K A .100 (2.54) .060 (1.52) .103 (2.62) .


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