Phototransistor Detector. NTE3032 Datasheet

NTE3032 Detector. Datasheet pdf. Equivalent

Part NTE3032
Description Phototransistor Detector
Feature NTE3032 Phototransistor Detector NPN–Si, Visible & IR Description: The NTE3032 is a silicon NPN phot.
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Datasheet
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NTE3032
NTE3032
Phototransistor Detector
NPN–Si, Visible & IR
Description:
The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in
industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications
or any design requiring radiation sensitivity and stable characteristics.
Features:
D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
D Minimum Light Current: 8mH @ H = 5mW/cm2
D External Base for Added Control
D Annular Passivated Structure for Stability and Reliability
D Popular TO18 Type Package for Easy Handling and Mounting
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Total Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Collector Dark Current
Collector–Base Breakdown Voltage
Emitter–Collector Breakdown Voltage
Optical Characteristics
ICEO
V(BR)CBO
V(BR)ECO
VCC = 10V, H 0
IC = 100µA
IE = 100µA
– – 100 nA
80 – – V
5––V
Light Current
Photo Current Rise Time
Photo Current Fall Time
IL VCC = 5V, RL = 100, Note 1 8 – – mA
tr RL = 100, IL = 1mA (Peak), – 15 – µs
tf Note 2
– 15 – µs
Note 1. Radiation flux density (H) equal to 5mW/cm2 emitted from a tungsten source at a color
temperature of 2870 K.
Note 2. For unsaturated response time measurement, radiation is provided by pulsed GaAs (gallium
arsenide) light–emitting diode (λ ∼ µm) with a pulse width equal to or greater than 10µs,
IL = 1mA Peak.



NTE3032
.120 (3.05) Dia
Window on
Center Line
.150 (3.81) Die
Seating Plane
.210 (5.33) Dia
.184 (4.67) Dia
.021
(0.53)
.240
(6.09)
.500
(12.7)
Min
.018 (0.45) Dia Typ
.100 (2.54) Dia
.040 (1.02)
45°
Collector
Emitter
Base







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