Phototransistor Detector. NTE3035 Datasheet

NTE3035 Detector. Datasheet pdf. Equivalent

Part NTE3035
Description Phototransistor Detector
Feature NTE3035A Phototransistor Detector Description: The NTE3035A is designed for a wide variety of indust.
Manufacture NTE
Datasheet
Download NTE3035 Datasheet




NTE3035
NTE3035A
Phototransistor Detector
Description:
The NTE3035A is designed for a wide variety of industrial processing and control applications requir-
ing a sensitive detector. The NTE3034A is is an identical package and is designed to be used with
the NTE3029A infrared emitter.
Features:
D Miniature, Low Profile, Clear Plastic Package
D Designed for Automatic Handling and Accurate Positioning
D Side Looking, with Molded Lens
D High Volume, Economical
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Lead Temperature (During Soldering, 1/16” from case, 5sec max., Note 2), TL . . . . . . . . . . +260°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Dark Current
Collector–Emitter Breakdown Voltage
Capacitance
ID VCE = 10V, H [ 0
V(BR)CEO IC = 10mA, H [ 0
Cce VCC = 5V, f = 1MHz
– – 100 nA
60 – – V
– 3.9 – pF
Optical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Light Current
IL VCE = 5V, H = 500µW/cm2,
λ = 940nm
Turn–On Time
Turn–Off Time
ton H = 500µW/cm2, VCC = 5V,
toff RL = 100
Saturation Voltage
VCE(sat) H = 500µW/cm2, λ = 940nm,
IC = 2mA, VCC = 5V
Wavelength of Maximum Sensitivity λs
Min Typ Max Unit
5 25 – mA
– 125 – µs
– 150 – µs
– 0.75 1.0 V
– 0.8 – µm
Note 1. Measured with device soldered into a typical PC board.
Note 2. Heat sink should be applied to leads during soldering to prevent case temperature from ex-
ceeding +100°C.



NTE3035
.125
(3.17)
.160 (4.06)
.045 (1.14) Dia
.120
(3.04)
.168
(4.27)
.750
(19.05)
Max
.020 (.508)
EC
.103
(2.62)
.100 (2.54)
.060 (1.52)







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