Light Detector. NTE3036 Datasheet

NTE3036 Detector. Datasheet pdf. Equivalent

Part NTE3036
Description Phototransistor Silicon NPN Photo Darlington Light Detector
Feature NTE3036 Phototransistor Silicon NPN Photo Darlington Light Detector Description: The NTE3036 is a si.
Manufacture NTE
Datasheet
Download NTE3036 Datasheet




NTE3036
NTE3036
Phototransistor
Silicon NPN Photo Darlington Light Detector
Description:
The NTE3036 is a silicon NPN photo Darlington light detector in a TO18 type package designed for
use in applications such as industrial inspection, processing and control, counter, sorters, switching
and logic circuit or any design requiring very high radiation sensitivity at low light levels.
Features:
D Popular TO18 Type Hermetic Package for Easy Handling and Mounting
D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
D Minimum Light Current: 12mA @ H = 0.5mW/cm2
D External Base for Added Control
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Light Current, IL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Collector Dark Current
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdwon Voltage
ICEO VCE = 10V, H 0
V(BR)CBO IC = 100µA
V(BR)CEO IC = 100µA
V(BR)EBO IE = 100µA
Min Typ Max Unit
– 10 100 nA
50 100 –
V
40 80 –
V
10 15.5 –
V



NTE3036
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Optical Characteristics
Light Current
CollectorEmitter Saturation Voltage
Photo Current Rise Time
Photo Current Fall Time
IL
VCE(sat)
tr
tf
VCC = 5V, RL = 10, Note 1
IL = 10mA, H = 2mW/cm2 at 2870°K
RL = 10, IL = 1mA Peak, Note 2
RL = 10, IL = 1mA Peak, Note 2
12 20 mA
0.6 1.0 V
15 100 µs
65 150 µs
Note 1. Radiation flux density (H) is equal to 0.5mW/cm2 emitted from a tungsten source at a color
temperature of 2780°K.
Note 2. For unsaturated response time measurement, radiation is provided by pulse GaAs (gallium
arsenide) light emitting diode (λ 0.9µm) with a pulse width equal to or greater than 500µs,
IL = 1mA peak.
.228 (5.79) Max
.185 (4.69)
.177
(4.5)
.276
(7.01)
Max
Emitter
.500
(12.7)
Min
.018 (0.45) Dia Typ
.100 (2.54) Dia
Base
Collector/Case







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