NPN Transistor. NTE3041 Datasheet

NTE3041 Transistor. Datasheet pdf. Equivalent

Part NTE3041
Description Optoisolator NPN Transistor
Feature NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead D.
Manufacture NTE
Datasheet
Download NTE3041 Datasheet



NTE3041
NTE3041
Optoisolator
NPN Transistor Output
Description:
The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide in-
frared emitting diode optically coupled to a monolithic silicon phototransistor detector.
Features:
D High Current Transfer Ratio: 100% Min @ Spec Conditions
D Guaranteed Switching Speeds
Applications:
D General Purpose Switching Circuits
D Interfacing and Coupling Systems of Different Potentials and Impedances
D Regulation Feedback Circuits
D Monitor & Detection Circuits
D Solid State Relays
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Input LED
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
LED Power Dissipation (With Negligible Power in Output Detector), PD . . . . . . . . . . . . . . . . . 120mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/°C
Output Transistor
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Detector Power Dissipation (With Negligible Power in Output Detector), PD . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/°C
Total Device
Isolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO . . . . . . . . . . 7500V
Total Device Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/°C
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. Isolation Surge Voltage is an internal device dielectric breakdown rating. For this test, Pin1
and Pin2 are common, and Pin4, Pin5, and Pin6 are common.



NTE3041
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Input LED
Forward Voltage
Reverse Leakage Current
Capacitance
Output Transistor
VF IF = 10mA
IF = 10mA, TA = 55°C
IF = 10mA, TA = +100°C
IR VR = 6V
CJ V = 0, f = 1MHz
CollectorEmitter Dark Current
CollectorBase Dark Current
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
DC Current Gain
CollectorEmitter Capacitance
CollectorBase Capacitance
EmitterBase Capacitance
Coupled
ICEO
ICBO
V(BR)CEO
V(BR)CBO
V(BR)EBO
hFE
CCE
CCB
CEB
VCE = 10V
VCE = 30V, TA = +100°C
VCB = 10V
VCB = 10V, TA = +100°C
IC = 1mA
IC = 100µA
IE = 100µA
IC = 2mA, VCE = 5V
VCE = 5V, f = 1MHz
VCB = 0, f = 1MHz
VEB = 0, f = 1MHz
Output Collector Current
CollectorEmitter Saturation Voltage
TurnOn Time
TurnOff Time
Rise Time
Fall Time
Isolation Voltage
Isolation Current
Isolation Resistance
IC
VCE(sat)
ton
toff
tr
tf
VISO
IISO
RISO
IF = 10mA, VCE = 10V
IF = 10mA, VCE = 10V, TA = 55°C
IF = 10mA, VCE = 10V, TA = +100°C
IC = 0.5mA, IF = 10mA
IC = 2mA, VCC = 10V, RL = 100
f = 60Hz, t = 1sec
VIO = 3550Vpk
V = 500V
Isolation Capacitance
CISO V = 0, f = 1MHz
Min Typ Max Unit
0.8 1.15 1.5
0.9 1.3 1.7
0.7 1.05 1.4
– – 10
18
V
V
V
µA
pF
1 50 nA
– – 500 µA
0.2 20 nA
100 nA
30 45
V
70 100
V
7.0 7.8
V
400
7 pF
19 pF
9 pF
10 30
4
4
0.14
7.5
5.7
3.2
4.7
7500
1011
0.2
0.3
10
10
100
2.0
mA
mA
mA
V
µs
µs
µs
µs
V
µA
pF







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