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NTE3086 Dataheets PDF



Part Number NTE3086
Manufacturers NTE
Logo NTE
Description Optoisolator
Datasheet NTE3086 DatasheetNTE3086 Datasheet (PDF)

NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability. Features: D Two isolated Channels per Package D 7500V Withstand Test Voltage D CTR Minimum: 20% Absolute Maximum Ratings: Gallium Arsenide LED (Each Channel) Power Dissipation (TA = .

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NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability. Features: D Two isolated Channels per Package D 7500V Withstand Test Voltage D CTR Minimum: 20% Absolute Maximum Ratings: Gallium Arsenide LED (Each Channel) Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3mW/°C Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (Pulse Width 1µs, 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Phototransistor (Each Channel) Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C Collector–Emitter Breakdow Voltage, V(BR)CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Breakdow Voltage, V(BR)CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Collector Breakdow Voltage, V(BR)ECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Total Device Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33mW/°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +250°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Gallium Arsenide LED Forward Voltage Reverse Voltage Reverse Current Junction Capacitance VF VR IR IF = 20mA IR = 10µA VR = 3V V = 0, f = 1MHz – 3 – – 1.1 25 – 80 1.5 – 10 – V V µA pF Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Phototransistor Detector Collector–Emitter Breakdown Voltage Emitter–Collector Breakdown Voltage Collector–Base Breakdown Voltage Collector–Emitter Leakage Current Collector–Emitter Capacitance Coupled Electrical Characteristics Collector–Emitter Saturation Voltage DC Current Transfer Ratio Isolation Voltage Isolation Resistance Input to Output Capacitance Bandwidth Switching Times Non–Saturated Rise Time, Fall Time Non–Saturated Rise Time, Fall Time Saturated Turn–On Time (From 5V to 0.8V) Saturated Turn–Off Time (From Saturation to 2V) tr, tf tr, tf ton(sat) toff(sat) VCC = 10V, IC = 2mA, RL = 100Ω, Note 1 VCC = 10V, IC = 2mA, RL = 1kΩ, Note 1 RL = 2kΩ, IF = 40mA RL = 2kΩ, IF = 40mA – – – – 2.4 15 5 25 – – – – µs µs µs µs BW VCE(sat) CTR V(BR)(I–O) R(I–O) IC = 2mA, IF = 16mA VCE = 10V, IF = 10mA t = 1sec VI–O = 500V f = 1MHz IC = 2mA, VCC = 10V, RL = 100Ω – 20 1011 – – 0.2 50 1012 0.4 150 0.4 – – – – – V % V Ω pF kHz V(BR)CEO V(BR)ECO V(BR)CBO ICEO CCE IC = 100µA, IF = 0 IE = 100µA, IF = 0 IC = 10µA, IF = 0 VCE = 10V, IF = 0 VCE = 0, IF = 0 30 6 80 – – 85 13 – 5 8 – – – 100 – V V V nA pF Symbol Test Conditions Min Typ Max Unit 1500 2500 Note 1. The frequency at which IC is 3dB down from the 1kHz value. Anode Cathode Cathode Anode 1 2 3 4 8 Emitter 7 Collector 6 Collector 5 Emitter 8 5 .250 (6.35) 1 4 .390 (9.9) Max .185 (4.7) Max Seating Plane .100 (2.54) .115 (2.94) Min .


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