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NTE3102 Dataheets PDF



Part Number NTE3102
Manufacturers NTE
Logo NTE
Description Photon Coupled Interrupter Module
Datasheet NTE3102 DatasheetNTE3102 Datasheet (PDF)

NTE3102 Photon Coupled Interrupter Module NPN Transistor Description: The NTE3102 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON” into an “OFF” state. Absolu.

  NTE3102   NTE3102



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NTE3102 Photon Coupled Interrupter Module NPN Transistor Description: The NTE3102 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON” into an “OFF” state. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Total Device Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C Lead Temperature (During Soldering, 5sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Infrared Emitting Diode Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (Pulse Width ≤ 1µs, PRR ≤ 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Power Dissipation, PE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33mW/°C Phototransistor Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified) Parameter Emitter Reverse Breakdown Voltage Forward Voltage Reverse Current Capacitance V(BR)R VF IR Ci IR = 10µA IF = 60mA VR = 5V V = 0, f = 1MHz 6 – – – – – – 30 – 1.7 100 – V V nA pF Symbol Test Conditions Min Typ Max Unit Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided. Electrical Characteristics (Cont’d): (TA = +25°C, Note 1 unless otherwise specified) Parameter Detector Collector–Emitter Breakdown Voltage Emitter–Collector Breakdown Vol.


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