NTE350

NTE350 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE350 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: D Specified 12.5V, 175MHz Characteristics: Output Power = 15W Minimum Gain = 6.3dB Efficiency = 60% Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Total Device Dissipation (Note 1, TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as...