DatasheetsPDF.com

NTE48 Dataheets PDF



Part Number NTE48
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet NTE48 DatasheetNTE48 Datasheet (PDF)

NTE48 Silicon NPN Transistor Darlington, General Purpose Amplifier, High Current Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  NTE48   NTE48


Document
NTE48 Silicon NPN Transistor Darlington, General Purpose Amplifier, High Current Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Collector–Emitter Breakdown V(BR)CES IC = 1mA, IB = 0, Note 1 Voltage Collector–Base Breakdown Voltage V(BR)CBO IC = 1.0µA, IE = 0 Emitter–Base Breakdown Voltage Collector Cutoff Voltage Emitter Cutoff Current V(BR)EBO IE = 10µA, IC = 0 ICBO IEBO VCB = 40V, IE = 0 VBE = 10V, IC = 0 50 600 12 – – – – – – – – – – 100 100 V V V nA nA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Collector–Base Capacitance fT Ccb IC = 200mA, VCE = 5V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz 100 – – – 1000 10 MHz pF hFE VCE(sat) VBE(on) IC = 200mA, VCE = 5V IC = 1000mA, VCE = 5V IC = 1000mA, IB = 2mA IC = 1000mA, VCE = 5V 25,000 4,000 – – – – – – – 40,000 1.5 2.0 V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% .339 (8.62) Max Seating Plane C B .512 (13.0) Min .026 (.66) Dia Max E E B C .100 (2.54) .200 (5.08) Max .240 (6.09) Max .


NTE478 NTE48 NTE480


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)