Document
NTE48 Silicon NPN Transistor Darlington, General Purpose Amplifier, High Current
Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics Collector–Emitter Breakdown V(BR)CES IC = 1mA, IB = 0, Note 1 Voltage Collector–Base Breakdown Voltage V(BR)CBO IC = 1.0µA, IE = 0 Emitter–Base Breakdown Voltage Collector Cutoff Voltage Emitter Cutoff Current V(BR)EBO IE = 10µA, IC = 0 ICBO IEBO VCB = 40V, IE = 0 VBE = 10V, IC = 0 50 600 12 – – – – – – – – – – 100 100 V V V nA nA Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Collector–Base Capacitance fT Ccb IC = 200mA, VCE = 5V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz 100 – – – 1000 10 MHz pF hFE VCE(sat) VBE(on) IC = 200mA, VCE = 5V IC = 1000mA, VCE = 5V IC = 1000mA, IB = 2mA IC = 1000mA, VCE = 5V 25,000 4,000 – – – – – – – 40,000 1.5 2.0 V V Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
.339 (8.62) Max Seating Plane
C B
.512 (13.0) Min
.026 (.66) Dia Max
E
E B C .100 (2.54)
.200 (5.08) Max
.240 (6.09) Max
.