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NTE525

NTE

Silicon Diode

NTE525 Silicon Diode High Voltage Fast Recovery Switch Features: D Fast Switching D Low Leakage D High Current Capabilit...


NTE

NTE525

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NTE525 Silicon Diode High Voltage Fast Recovery Switch Features: D Fast Switching D Low Leakage D High Current Capability D High Surge Capability D High Reliability Absolute Maximum Ratings: (TA = +25°C unless otherwise specified, Note 1) Maximum Recurrent Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V Maximum RMS Voltage, VRMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1400V Maximum DC Blocking Voltage, VDC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V Maximum Average Forward Rectified Current (TA = +50°C, .375” Lead Length), IO . . . . . . . 200mA Peak Forward Surge Current (8.3ms single half sine–wave superimposed), IFSM . . . . . . . . . . . 30A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Note 1. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Electrical Characteristics: (TA = +25°C unless otherwise specified, Note 1) Parameter Maximum Instantaneous Forward Voltage Maximum DC Reverse Current Maximum Full Load Reverse Current Average Maximum Reverse Recovery Time Symbol VF IR IR trr Test Conditions IF = 0.5A/0.2A DC VDC = 2000V TA = +55°...




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