NTE5426

NTE5426 Silicon Controlled Rectifier (SCR) Sensitive Gate Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off–state to conduction by a current pulse applied to the gate terminal and is designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (Gate Open, TC = +110°C), VDRM . . . . . . . . . . . . . . . . . . . . . 400V Repetitive Peak Reverse Voltage (Gate Open, TC = +110°C), VRRM . . . . . . . . . . . . . . . . . . . . . . 400V RMS On–State Current (TC = +80°C, 180° Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 10A Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50 or 60Hz), ITSM . . . . . . . . . . . . 80A Peak Gate–Trigger Current (3µs max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Gate–Power Dissipation (IGT = IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Typical Thermal Resis...