NTE5511

NTE5511 thru NTE5513 Silicon Controlled Rectifier (SCR) 5 Amp Description: The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power–control and power–switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75°C. Features: D Designed Especially for High–Volume Systems D Readily Adaptable for PC Boards and Metal Heat Sinks D Low Switching Losses D High di/dt and dv/dt Capabilities D Shorted Emitter Gate–Cathode Construction D Forward and Reverse Gate Dissipation Ratings D All–Diffused Construction Assures Exceptional Uniformity and Stability of Characteristics D Direct–Soldered Internal Construction Assures Exceptional Resistance to Fatigue D Symmetrical Gate–Cathode Construction Provides Uniform Current Density, Rapid Electrical Conduction, and Efficient Heat Dissipation D All–Welded Construction and Hermetic Sealing D Low Leakage Currents, Forward and Reverse D Low Forward Voltage Drop at High Current Levels D Low Thermal Resistance Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency between 50Hz and 400Hz, and with Resistive or Inductive Load) Transient Peak Reverse Voltage (Non–Repetitive), VRM (non–rep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...