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NTE5513 Dataheets PDF



Part Number NTE5513
Manufacturers NTE
Logo NTE
Description Silicon Controlled Rectifier
Datasheet NTE5513 DatasheetNTE5513 Datasheet (PDF)

NTE5511 thru NTE5513 Silicon Controlled Rectifier (SCR) 5 Amp Description: The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power–control and power–switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75°C. Features: D Designed Especially for High–Volume Systems D Readily Adaptable f.

  NTE5513   NTE5513


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NTE5511 thru NTE5513 Silicon Controlled Rectifier (SCR) 5 Amp Description: The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power–control and power–switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75°C. Features: D Designed Especially for High–Volume Systems D Readily Adaptable for PC Boards and Metal Heat Sinks D Low Switching Losses D High di/dt and dv/dt Capabilities D Shorted Emitter Gate–Cathode Construction D Forward and Reverse Gate Dissipation Ratings D All–Diffused Construction Assures Exceptional Uniformity and Stability of Characteristics D Direct–Soldered Internal Construction Assures Exceptional Resistance to Fatigue D Symmetrical Gate–Cathode Construction Provides Uniform Current Density, Rapid Electrical Conduction, and Efficient Heat Dissipation D All–Welded Construction and Hermetic Sealing D Low Leakage Currents, Forward and Reverse D Low Forward Voltage Drop at High Current Levels D Low Thermal Resistance Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency between 50Hz and 400Hz, and with Resistive or Inductive Load) Transient Peak Reverse Voltage (Non–Repetitive), VRM (non–rep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 660V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Peak Reverse Voltage (Repetitive), VRM (rep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Peak Forward Blocking Voltage (Repetitive), VFBOM (rep) NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Average DC Forward Current, IF(av) (TC = +75°C mounted on heat sink, conduction angle or 180°) . . . . . . . . . . . . . . . . . . . . 3.2A RMS Forward Current (TC = +75°C mounted on heat sink), IFRMS . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak Surge Current (For one cycle of applied voltage), iFM(surge) . . . . . . . . . . . . . . . . . . . . . . . . . 60A Sub–Cycle Surge (Non–Repetitive, for a period of 1ms to 8.3ms), I2t . . . . . . . . . . . . . . . . . . 15A2sec Rate of Change of Forward Current (Note 1), di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/µs Gate Power (Peak, Forward, or Reverse, for 10µs duration, Note 2), PGM . . . . . . . . . . . . . . . . 13W Average Gate Power (Note 2), PGAV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Note 1. VFB = vBOO(min value), IGT = 200mA, 0.5µs rise time Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible. Electrical Characteristics: (At Maximum Ratings, TC = +25°C unless otherwise specified) Parameter Forward Breakover Voltage NTE5511 NTE5512 NTE5513 Peak Blocking Forward Current NTE5511 NTE5512 NTE5513 Peak Blocking Reverse Current NTE5511 NTE5512 NTE5513 Forward Voltage Drop DC Gate–Trigger Current DC Gate–Trigger Voltage Holding Current Critical Rate of Applied Forward Voltage Turn–On Time (Delay Time + Rise Time) Turn–Off Time (Reverse Recovery Time + Gate Recovery Time) Thermal Resistance, Junction–to–Case vF IGT VGT IHold dv/dt ton toff VFB = vBOO (min), exponential rise, TC = +100°C VFB = vBOO (min), iF = 4.5A, IGT = 200mA, 0.1µs rise time iF = 2A, 50µs pulse width, dvFB/dt = 20V/µs, dir/dt = 30A/µs, IGT = 200mA, TC = +75°C IRBOM IFBOM VFBO = 200V VFBO = 400V VFBO = 600V VRBO = 200V VRBO = 400V VRBO = 600V IF = 30A TC = +100°C TC = +100°C Symbol vBOO Test Conditions TC = +100°C 200 400 600 – – – – – – – – .


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